FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -60 Units V V VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100, IE=0 Min. -60 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA. IB=0 -50 BVEBO Emitter-Base Breakdown Voltage IE = -10. IC=0 -5 V ICBO Collector Cut-off Current VCB= -25V, IE=0 IEBO Emitter Cut-off Current VEB= -3V, IC=0 hFE DC Current Gain VCE= -6V, IC= -1mA VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.50 -0.62 -0.80 V fT Current Gain Bandwidth Product VCE= -6V, IC= -10mA 50 180 MHz Cob Output Capacitance VCB= -10V, IE = 0 f=1MHz 2.8 pF NF Noise Figure VCE= -6V, IC= -0.3mA f=1MHz, Rs=10K 6.0 V 40 -100 nA -100 nA 700 20 dB hFE Classification Classification R O Y G L hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 Marking SBX Grade ©2002 Fairchild Semiconductor Corporation Rev. B2, August 2002 FJX733 Typical Characteristics 1000 -50 VCE = -6V -45 -40 IB = -350µ A -35 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = -400µ A IB = -300µ A -30 IB = -250µ A -25 IB = -200µ A -20 IB = -150µ A -15 IB = -100µ A -10 100 10 IB = -50µ A -5 1 -0.1 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE -10 -100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 Figure 2. DC current Gain -100 -10 IC = 10 IB IC[mA], COLLECTOR CURRENT -1 VCE = -6V V BE(sat) -0.1 V CE(sat) -10 -100 -1 -0.1 0.0 -0.01 -1 -10 -1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE 10 1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation -0.4 -0.6 -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1 -0.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT 1000 VCE = -6V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. B2, August 2002 FJX733 Package Dimensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1