NTA7002N Small Signal MOSFET 30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−75 http://onsemi.com Features • • • • Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb−Free Package is Available RDS(on) Typ @ VGS V(BR)DSS ID MAX (Note 1) 1.4 W @ 4.5 V 30 V 154 mA 2.3 W @ 2.5 V Applications 3 • Power Management Load Switch • Level Shift • Portable Applications such as Cell Phones, Media Players, 1 Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc. 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage Parameter VDSS 30 V Gate−to−Source Voltage VGS "10 V Continuous Drain Current (Note 1) Steady State = 25°C ID 154 mA Power Dissipation (Note 1) Steady State = 25°C PD 300 mW N−Channel PIN CONNECTIONS SC−75 (3−Leads) Gate 1 3 Pulsed Drain Current tP v 10 ms IDM 618 mA TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) ISD 154 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Junction−to−Ambient – Steady State (Note 1) 2 (Top View) MARKING DIAGRAM 3 3 THERMAL RESISTANCE RATINGS Parameter Source Drain 2 Symbol Max Unit RqJA 416 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). T6 MG SC−75 / SOT−416 G CASE 463 1 2 STYLE 5 T6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1 ORDERING INFORMATION Device NTA7002NT1 NTA7002NT1G Package Shipping† SC−75 3000 Tape & Reel SC−75 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 1 1 Publication Order Number: NTA7002N/D NTA7002N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = 100 mA 30 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V, T = 85 °C 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±25 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V ±1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V T = 85 °C ±1.0 mA Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 100 mA 1.0 1.5 V Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 154 mA 1.4 7.0 VGS = 2.5 V, ID = 154 mA 2.3 7.5 VDS = 3 V, ID = 154 mA 80 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Forward Transconductance gFS 0.5 W mS CAPACITANCES Input Capacitance CISS 11.5 VDS = 5.0 V, f = 1 MHz, VGS = 0 V Output Capacitance COSS 10 Reverse Transfer Capacitance CRSS 3.5 td(ON) 13 pF SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 5.0 V, ID = 75 mA, RG = 10 W tf ns 15 98 ns 60 Drain−Source Diode Characteristics Forward Diode Voltage VSD VGS = 0 V, IS = 0.154 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.77 0.9 V NTA7002N TYPICAL PERFORMANCE CURVES VGS = 10 V 5V 2.8 V 2.4 V 0.18 0.16 0.14 0.2 TJ = 25°C VDS = 5 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 0.2 2V 0.12 0.1 0.08 0.06 0.04 0.02 1.4 V 0 1.2 V 0 0.4 0.8 1.6 1.2 0.16 0.12 0.08 TJ = 125°C 0.04 TJ = 25°C TJ = −55°C 0 0.6 2.0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 2.5 VGS = 4.5 V TJ = 125°C 2 1.5 TJ = 25°C 1 TJ = −55°C 0.5 0 0.1 0.15 0.05 ID, DRAIN CURRENT (AMPS) 0.2 2.5 TJ = 25°C 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS) 0.2 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2 1000 ID = 0.15 A VGS = 4.5 V VGS = 0 V 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = 2.5 V 2 Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 0.8 1 1.2 1.4 1.6 1.8 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1.4 1.2 1 0.8 0.6 100 TJ = 150°C 10 TJ = 125°C 0.4 0.2 0 −50 1 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTA7002N TYPICAL PERFORMANCE CURVES 20 Ciss 1000 TJ = 25°C VDD = 5.0 V ID = 75 mA VGS = 4.5 V Crss t, TIME (ns) C, CAPACITANCE (pF) 25 15 10 Ciss tr td(on) 10 Coss 5 0 10 td(off) tf 100 VDS = 0 V 5 VGS = 0 V 0 VGS Crss 5 10 15 1 20 1 VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 10 RG, GATE RESISTANCE (OHMS) Figure 8. Resistive Switching Time Variation vs. Gate Resistance IS, SOURCE CURRENT (AMPS) 0.16 0.14 VGS = 0 V TJ = 25°C 0.12 0.1 0.08 0.06 0.04 0.02 0 0.5 0.65 0.55 0.6 0.7 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 0.8 100 NTA7002N PACKAGE DIMENSIONS SC−75 / SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D 0.20 (0.008) E HE C STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 NTA7002N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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