ONSEMI NTR1P02T1

NTR1P02T1
Power MOSFET
−20 V, −1 A, P−Channel SOT−23 Package
Features
• Ultra Low On−Resistance Provides Higher Efficiency
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V(BR)DSS
RDS(on) TYP
ID MAX
−20 V
148 m @ −10 V
−1.0 A
P−Channel
D
Applications
•
•
•
•
•
DC−DC Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Rating
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 1 s)
ID
IDM
−1.0
−2.67
Total Power Dissipation @ TA = 25°C
PD
400
mW
Operating and Storage Temperature Range
TJ, Tstg
− 55 to
150
°C
Thermal Resistance − Junction−to−Ambient
RJA
300
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
MARKING DIAGRAM/
PIN ASSIGNMENT
3
3
Drain
A
1
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
P2
SOT−23
CASE 318
STYLE 21
P2
M
1
Gate
M
•
•
•
and Extends Battery Life
RDS(on) = 0.180 , VGS = −10 V
RDS(on) = 0.280 , VGS = −4.5 V
Power Management in Portable and Battery−Powered Products
Miniature SOT−23 Surface Mount Package Saves Board Space
Mounting Information for SOT−23 Package Provided
2
Source
= Specific Device Code
= Date Code
ORDERING INFORMATION
Package
Shipping†
NTR1P02T1
SOT−23
3000/Tape & Reel
NTR1P02T3
SOT−23
10,000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 4
1
Publication Order Number:
NTR1P02T1/D
NTR1P02T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage
(VGS = 0 V, ID = −10 A)
(Positive Temperature Coefficient)
−20
V
mV/°C
32
Zero Gate Voltage Drain Current
(VDS = −20 V, VGS = 0 V, TJ = 25°C)
(VDS = −20 V, VGS = 0 V, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ±20 V, VDS = 0 V)
IGSS
A
−1.0
−10
±100
nA
−1.9
−4.0
−2.3
V
mV/°C
0.148
0.235
0.180
0.280
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = −250 A)
(Negative Temperature Coefficient)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = −10 V, ID = −1.5 A)
(VGS = −4.5 V, ID = −0.75 A)
RDS(on)
−1.1
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Ciss
165
Output Capacitance
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Coss
110
Reverse Transfer Capacitance
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Crss
35
Turn−On Delay Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 )
td(on)
7.0
Rise Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 )
tr
9.0
Turn−Off Delay Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 )
td(off)
9.0
Fall Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 )
tf
3.0
Total Gate Charge
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
Qtot
2.5
Gate−Source Charge
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
Qgs
0.75
Gate−Drain Charge
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
Qgd
1.0
pF
SWITCHING CHARACTERISTICS (Note 2)
ns
nC
BODY−DRAIN DIODE RATINGS (Note 1)
Diode Forward On−Voltage (Note 2)
(IS = −0.6 A, VGS = 0 V)
(IS = −0.6 A, VGS = 0 V, TJ = 150°C)
VSD
V
−0.8
−0.6
Reverse Recovery Time
(IS = −1
1 A,
A dIS/dt = 100 A/
A/s, VGS = 0 V)
Reverse Recovery Stored Charge
(IS = −1 A, dIS/dt = 100 A/s, VGS = 0 V)
trr
13.5
ta
10.5
tb
3.0
QRR
0.008
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
−1.0
ns
C
NTR1P02T1
2
TJ = 25°C
2.25
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
2.5
−4 V
2
−4.5 V
1.75
−3.5 V
1.5
1.25
1
0.75
−3 V
0.5
0.25
0
VGS = −2.5 V
VDS ≥ −10 V
1.5
1.25
1
0.75
TJ = 125°C
0.25
2
2.5
3
3.5
1.5
2
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
0.45
0.4
VGS = −4.5 V
0.35
TJ = 150°C
0.3
0.25
TJ = 25°C
0.2
TJ = −40°C
0.15
0.1
0.05
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
4
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
TJ = −40°C
0.5
0
1.5
0.75
1
1.75
0.25
0.5
1.25
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
0.9
1
−ID, DRAIN CURRENT (AMPS)
0.275
VGS = −10 V
0.25
0.225
TJ = 150°C
0.2
0.175
0.15
TJ = 25°C
0.125
0.1
TJ = −40°C
0.075
0.05
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Temperature
1000
2.5
VGS = 0 V
2
ID = −1.5 A
VGS = −10 V
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = 25°C
1.75
1.5
1
TJ = 150°C
100
TJ = 125°C
10
0.5
0
−45
1
−20
5
30
55
80
105
130
155
1
3
5
7
9
11
13
15
17
19
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
21
300
TJ = 25°C
Ciss
C, CAPACITANCE (pF)
250
Crss
200
Ciss
150
100
Coss
50
0
10
VDS = 0 V
0
5
−VGS
Crss
VGS = 0 V
5
10
15
20
25
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTR1P02T1
6
QT
4.5
VDS
VGS
1.5
ID = −1 A
TJ = 25°C
0
0
0.5
−VDS
1
1.5
2
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 7. Capacitance Variation
100
1.001
IS, SOURCE CURRENT (AMPS)
VDD = −15 V
ID = −1 A
VGS = −5 V
t, TIME (ns)
Q2
Q1
3
tr
10
td(off)
td(on)
tf
1
1
10
0.901
VGS = 0 V
TJ = 25°C
0.801
0.701
0.601
0.501
0.401
0.301
0.201
0.101
0.001
2.0E−01 3.0E−01
100
RG, GATE RESISTANCE ()
4.0E−01
5.0E−01 6.0E−01 7.0E−01
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
NTR1P02T1
PACKAGE DIMENSIONS
SOT−23
(TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
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5
mm inches
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
NTR1P02T1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTR1P02T1/D