NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com Features • • • • • • hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count This is a Pb−Free Device (3) (2) (1) Q1 Q2 (4) (5) (6) NST3906DP6T5G MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −40 V Collector −Base Voltage VCBO −40 V Emitter −Base Voltage VEBO −5.0 V IC −200 mA ESD Class 2 B Symbol Max Unit PD 240 1.9 mW mW/°C RqJA 520 °C/W PD 280 2.2 mW mW/°C RqJA 446 °C/W Symbol Max Unit PD 350 2.8 mW mW/°C RqJA 357 °C/W PD 420 3.4 mW mW/°C Device Package Shipping† Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 297 °C/W NST3906DP6T5G SOT−963 (Pb−Free) 8000/Tape & Reel Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Collector Current − Continuous Electrostatic Discharge HBM MM 6 Characteristic (Single Heated) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Characteristic (Dual Heated) (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) April, 2008 − Rev. 0 2 3 SOT−963 CASE 527AD PLASTIC MARKING DIAGRAM 1 FMG G F = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. © Semiconductor Components Industries, LLC, 2008 4 1 THERMAL CHARACTERISTICS Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) 5 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NST3906DP6/D NST3906DP6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 4) (IC = 1.0 mAdc, IB = 0) V(BR)CEO −40 − V Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO −40 − V Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO −5.0 − V Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − −50 nA 60 80 100 60 30 − − 300 − − − − −0.25 −0.4 −0.65 − −0.85 −0.95 fT 250 − MHz Output Capacitance (VCB = −5.0 V, IE = 0 mA, f = 1.0 MHz) Cobo − 4.5 pF Input Capacitance (VEB = −0.5 V, IE = 0 mA, f = 1.0 MHz) Cibo − 10.0 pF Noise Figure (VCE = −5.0 V, IC = −100 mA, RS = 1.0 k Ω, f = 1.0 kHz) NF − 4.0 dB Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (Note 4) DC Current Gain (IC = −0.1 mA, VCE = −1.0 V) (IC = −1.0 mA, VCE = −1.0 V) (IC = −10 mA, VCE = −1.0 V) (IC = −50 mA, VCE = −1.0 V) (IC = −100 mA, VCE = −1.0 V) hFE Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) (IC = −50 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) (IC = −50 mA, IB = −5.0 mA) VBE(sat) − V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time (VCC = −3.0 V, VBE = 0.5 V) td − 35 Rise Time (IC = −10 mA, IB1 = −1.0 mA) tr − 35 Storage Time (VCC = −3.0 V, IC = −10 mA) ts − 250 Fall Time (IB1 = IB2 = −1.0 mA) tf − 50 ns ns 4. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%. 0.35 350 IC/IB = 10 hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.40 VCE(sat) = 150°C 0.30 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 150°C (5.0 V) 300 150°C (1.0 V) 250 200 25°C (5.0 V) 150 100 25°C (1.0 V) −55°C (5.0 V) −55°C (1.0 V) 50 0 0.0001 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain vs. Collector Current http://onsemi.com 2 1 NST3906DP6T5G 0.9 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 1.0 1.1 IC/IB = 10 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Turn−On Voltage vs. Collector Current 9.0 100 mA 0.9 0.8 80 mA 0.7 60 mA 0.6 40 mA 0.5 0.4 0.3 20 mA 0.2 IC = 10 mA 0.0001 0.001 0.01 8.0 7.0 6.0 Cib 5.0 4.0 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance 6.0 Cobo, OUTPUT CAPACITANCE (pF) 0.1 0 VCE = 2.0 V 1.0 IC, COLLECTOR CURRENT (A) 1.0 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 Cibo, INPUT CAPACITANCE (pF) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 Cob 0 5.0 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance http://onsemi.com 3 30 4.5 5.0 NST3906DP6T5G PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE B D 6 5 A B A L 4 HE E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C 3 e 6X C b 0.08 C A MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 DIM A b C D E e L HE B MIN INCHES NOM MAX 0.004 0.003 0.037 0.03 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.08 0.20 0.08 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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