NSS1C200LT1G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. •This is a Pb-Free Device http://onsemi.com -100 VOLTS, 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector‐Emitter Voltage Rating VCEO -100 Vdc Collector‐Base Voltage VCBO -140 Vdc Emitter‐Base Voltage VEBO -7.0 Vdc IC -2.0 A ICM -3.0 A Collector Current - Continuous Collector Current - Peak 3 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C Characteristic PD (Note 1) 490 mW 3.7 mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 1) 255 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 710 mW 4.3 mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 2) 176 °C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz. copper traces. 2. FR-4 @ 500 mm2, 1 oz. copper traces. DEVICE MARKING VL MG G 1 VL = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS1C200LT1G SOT-23 (Pb-Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 March, 2008 - Rev. 0 1 Publication Order Number: NSS1C200L/D NSS1C200LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO Vdc -100 Vdc -140 Vdc -7.0 Collector Cutoff Current (VCB = -140 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = -6.0 Vdc) IEBO nAdc -100 nAdc -50 ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) hFE 150 120 80 50 Collector-Emitter Saturation Voltage (Note 3) (IC = -0.1 A, IB = -0.01 A) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = -0.100 A) (IC = -2.0 A, IB = -0.200 A) VCE(sat) Base-Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.100 A) VBE(sat) Base-Emitter Turn-on Voltage (Note 3) (IC = -1.0 A, VCE = -2.0 V) VBE(on) 240 360 V -0.040 -0.080 -0.115 -0.250 V -0.950 V -0.850 Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Cibo 200 pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 22 pF 120 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. PD, POWER DISSIPATION (W) 0.60 0.50 Note 2 0.40 0.30 Note 1 0.20 0.10 0 0 20 40 60 80 100 120 TJ, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 140 160 NSS1C200LT1G 500 500 VCE = 4 V VCE = 2 V 150°C 300 400 DC, CURRENT GAIN 400 DC, CURRENT GAIN 150°C 25°C 200 -55°C 100 0.01 0.1 1 200 -55°C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain Figure 3. DC Current Gain 0.1 150°C 25°C -55°C 0.01 0.1 IC/IB = 10 1 10 VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 1 0.01 0.001 0 0.001 10 10 1 150°C 0.1 25°C -55°C 0.01 0.001 IC/IB = 50 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector-Emitter Saturation Voltage Figure 5. Collector-Emitter Saturation Voltage 1.2 VBE(sat), BASE-EMITTER VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 25°C 100 0 0.001 VBE(sat), BASE-EMITTER VOLTAGE (V) 300 1.0 -55°C 0.8 25°C 0.6 150°C 0.4 0.2 IC/IB = 10 0 0.001 0.01 0.1 1 10 1.2 1.0 -55°C 0.8 25°C 0.6 150°C 0.4 0.2 IC/IB = 50 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base-Emitter Saturation Voltage Figure 7. Base-Emitter Saturation Voltage http://onsemi.com 3 10 VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) NSS1C200LT1G VBE(on), BASE-EMITTER VOLTAGE (V) 1.0 -55°C 0.8 25°C 0.6 150°C 0.4 0.2 VCE = 2 V 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 1.00 TJ = 25°C 3A 2A 1A 0.10 0.5 A IC = 0.1 A 0.01 1.0E-04 1.0E-01 1.0E+00 Figure 9. Collector Saturation Region 400 80 TJ = 25°C fTEST = 1 MHz COBO, OUTPUT CAPACITANCE (pF) CIBO, INPUT CAPACITANCE (pF) 1.0E-02 IB, BASE CURRENT (A) Figure 8. Base-Emitter Saturation Voltage 300 200 100 0 0 1 2 3 4 5 6 7 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 VCE, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 140 120 TJ = 25°C fTEST = 1 MHz 70 8 100 10 TJ = 25°C fTEST = 1 MHz VCE = 10 V 10 ms IC, COLLECTOR CURRENT (A) fTau, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 1.0E-03 100 80 60 40 20 0 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 1 ms 1 100 ms Thermal Limit 0.1 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current-Gain Bandwidth Product Figure 13. http://onsemi.com 4 100 NSS1C200LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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