MMBT4403M3T5G PNP Switching Transistor The MMBT4403M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com Features • Reduces Board Space • This is a Halide−Free Device • This is a Pb−Free Device COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter−Base Voltage VEBO −5.0 Vdc IC −600 mAdc Symbol Max Unit Collector Current − Continuous 1 BASE 2 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA 470 °C/W PD 640 mW 5.1 mW/°C RqJA 195 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 265 2.1 mW mW/°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 0 3 1 2 1 AG M SOT−723 CASE 631AA STYLE 1 AG M = Specific Device Code = Date Code ORDERING INFORMATION Device MMBT4403M3T5G Package Shipping† SOT−723 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBT4403M3/D MMBT4403M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 − Vdc Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −40 − Vdc Emitter−Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Base Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) IBEV − −0.1 mAdc Collector Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc) ICEX − −0.1 mAdc 30 60 100 100 20 − − − 300 − − − − −0.4 −0.75 −0.75 − −0.95 −1.3 fT 200 − MHz ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −150 mAdc, VCE = −2.0 Vdc) (IC = −500 mAdc, VCE = −2.0 Vdc) (Note 3) (Note 3) Collector −Emitter Saturation Voltage (Note 3) Base −Emitter Saturation Voltage (Note 3) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) hFE VCE(sat) VBE(sat) Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Ccb − 8.5 pF Emitter−Base Capacitance (VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie 1.5 15 kW Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10− 4 Small −Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 60 500 − Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe 1.0 100 mMhos (VCC = −30 Vdc, VEB = −2.0 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) td − 15 tr − 20 (VCC = −30 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) ts − 225 tf − 30 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V -30 V 200 W < 2 ns +2 V +14 V 0 0 1.0 kW -16 V 200 W < 20 ns 1.0 kW CS* < 10 pF -16 V 10 to 100 ms, DUTY CYCLE = 2% 1.0 to 100 ms, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 2 CS* < 10 p MMBT4403M3T5G STATIC CHARACTERISTICS 450 VCE = 5.0 V VCE = 2.0 V VCE = 1.0 V h FE , DC CURRENT GAIN 400 350 TJ = 150°C 300 250 25°C 200 150 100 -55°C 50 0.001 0.0001 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 Figure 3. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.2 IC = 1.0 mA 10 mA 100 mA 500 mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 10 1 100 Ib, BASE CURRENT (mA) 0.35 0.5 IC/IB = 10 0.30 0 COEFFICIENT (mV/ °C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 4. Collector Saturation Region 0.25 150°C 0.20 25°C 0.15 0.10 qVC for VCE(sat) 0.5 1.0 1.5 -55°C qVS for VBE 2.0 0.05 0 0.0001 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) 2.5 0.1 0.2 1 Figure 5. Collector−Emitter Saturation Voltage vs. Collector Current 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 6. Temperature Coefficients http://onsemi.com 3 500 MMBT4403M3T5G 1.0 1.0 IC/IB = 10 VBE(on), BASE−EMITTER TURN ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 0.9 0.8 −55°C 0.7 0.6 25°C 0.5 0.4 0.3 150°C 0.0001 0.001 0.01 0.1 1 VCE = 2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0.0001 0.001 IC, COLLECTOR CURRENT (A) Figure 7. Base−Emitter Saturation Voltage vs. Collector Current 1 15 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 0.1 Figure 8. Base−Emitter Turn On Voltage vs. Collector Current 40 35 30 25 20 15 10 0.01 IC, COLLECTOR CURRENT (A) 0 1 2 3 4 5 6 13 11 9 7 5 3 0 Veb, EMITTER BASE VOLTAGE (V) 5 10 15 20 25 30 35 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 9. Input Capacitance vs. Emitter Base Voltage Figure 10. Output Capacitance vs. Collector Base Voltage http://onsemi.com 4 40 MMBT4403M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 1 e 2 E HE L b 2X 0.08 (0.0032) X Y C STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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