NSS60201LT1G 60 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. •This is a Pb-Free Device http://onsemi.com 60 VOLTS, 4.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 70 mW COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector‐Emitter Voltage VCEO 60 Vdc Collector‐Base Voltage VCBO 140 Vdc Emitter‐Base Voltage VEBO 8.0 Vdc IC 2.0 A Collector Current - Peak ICM 4.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C Rating Collector Current - Continuous 3 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS DEVICE MARKING Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 460 mW 3.7 mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 540 mW 4.3 mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 2) 230 °C/W Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Note 3) 710 mW Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz. copper traces. 2. FR-4 @ 500 mm2, 1 oz. copper traces. 3. Thermal response. © Semiconductor Components Industries, LLC, 2007 December, 2007 - Rev. 1 1 VJ MG G 1 VJ M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS60201LT1G SOT-23 (Pb-Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS60201L/D NSS60201LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 60 - - 140 - - 8.0 - - - - 0.1 - - 0.1 160 160 150 100 - 350 - - - 0.020 0.075 0.140 - 0.790 0.900 - 0.760 0.900 100 - - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector-Emitter Saturation Voltage (Note 4) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) VCE(sat) Base-Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 10 mA) VBE(sat) Base-Emitter Turn-on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo - - 380 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo - - 45 pF td - - 55 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr - - 100 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts - - 1100 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf - - 120 ns SWITCHING CHARACTERISTICS Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 NSS60201LT1G 325 300 0.35 IC/IB = 10 HFE, DC CURRENT GAIN VCE(sat) VOLTAGE (V) 0.30 0.25 150°C 0.20 25°C 0.15 -55°C 0.10 0.05 0 0.001 0.01 0.10 1.0 IC, COLLECTOR CURRENT (A) 150°C (5.0 V) 275 250 225 150°C (2.0 V) 25°C (5.0 V) 200 175 150 25°C (2.0 V) -55°C (5.0 V) 125 100 75 -55°C (2.0 V) 50 25 0.001 10 Figure 1. Collector-Emitter Saturation Voltage 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 2. DC Current versus Collector Current 1.2 1.2 HFE, DC CURRENT GAIN VBE(sat) VOLTAGE (V) 1.1 1.0 0.9 -55°C 0.8 25°C 0.7 0.6 150°C 0.5 1.0 -55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.4 0.3 0 0 0.1 1.0 0 0.001 10 0.10 1.0 IC, COLLECTOR CURRENT (A) Figure 3. VBE(sat) Figure 4. VBE(on) 10 400 1.0 IC = 10 mA Cibo, INPUT CAPACITANCE (pF) VCE, COLLECTOR-EMITTER VOLTAGE (V) 0.01 IC, COLLECTOR CURRENT (A) 0.8 100 mA 0.6 500 mA 0.4 300 mA 0.2 TJ = 25°C 375 350 325 300 275 250 225 200 175 0 0 0.0001 0.001 0.01 0.1 0 IB, BASE CURRENT (A) 1 2 3 4 VEB, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance http://onsemi.com 3 5 6 NSS60201LT1G 10 60 TJ = 25°C 55 IC, COLLECTOR CURRENT (A) Cobo, OUTPUT CAPACITANCE (pF) 65 50 45 40 35 30 25 20 15 10 1 ms 1s 1 Thermal Limit 0.1 100 ms 0.01 10 ms 0.001 0 5 10 15 20 25 30 35 0.10 10 10 VCB, COLLECTOR BASE VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Output Capacitance Figure 8. Safe Operating Area Single Pulse Test @ Tamb = 255C http://onsemi.com 4 100 NSS60201LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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