ONSEMI NTR4170NT3G

NTR4170N
Power MOSFET
30 V, 3.2 A, Single N−Channel, SOT−23
Features
•
•
•
•
•
Low RDS(on)
Low Gate Charge
Low Threshold Voltage
Halide Free
This is a Pb−Free Device
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V(BR)DSS
Applications
30 V
• Power Converters for Portables
• Battery Management
• Load/Power Switch
RDS(on) MAX
ID MAX
55 mW @ 10 V
3.2 A
70 mW @ 4.5 V
2.8 A
110 mW @ 2.5 V
2.0 A
SIMPLIFIED SCHEMATIC − N−CHANNEL
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±12
V
Parameter
Continuous Drain
Current (Note 1)
t ≤ 30 s
t ≤ 10 s
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
3.2
ID
TA = 25°C
MARKING DIAGRAM/
PIN ASSIGNMENT
W
PD
1.25
IDM
8.0
A
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
0.78
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
tp = 10 ms
Operating Junction and Storage Temperature
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
260
°C/W
Junction−to−Ambient − t ≤ 30 s
RqJA
153
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
June, 2008 − Rev. 0
3
3
Drain
1
TREMG
G
2
SOT−23
CASE 318
STYLE 21
1
1
Gate
2
Source
TRE
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Symbol
© Semiconductor Components Industries, LLC, 2008
S
A
4.0
t ≤ 10 s
Pulsed Drain Current
2.3
0.78
TA = 25°C
G
1
Package
Shipping†
NTR4170NT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
NTR4170NT3G
SOT−23
(Pb−Free)
10000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTR4170N/D
NTR4170N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
/TJ
ID = 250 mA, Reference to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 24 V, TJ = 25°C
VGS = 0 V, VDS = 24 V, TJ = 125°C
1.0
5.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "12 V
$100
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.4
V
Negative Threshold Temperature
Coefficient
VGS(TH)
/TJ
Drain−to−Source On−Resistance
RDS(on)
OFF CHARACTERISTICS
V
26.4
mV/°C
ON CHARACTERISTICS (Note 3)
Forward Transconductance
0.6
1.0
3.3
gFS
mV/°C
VGS = 10 V, ID = 3.2 A
45
55
mW
VGS = 4.5 V, ID = 2.8 A
50
70
VGS = 2.5 V, ID = 2.0 A
64
110
VDS = 5.0 V, ID = 3.2 A
8.0
S
432
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
53.6
37.1
nC
4.76
VGS = 4.5 V, VDS = 15 V,
ID = 3.2 A
0.3
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.4
RG
3.8
W
6.4
ns
Gate Resistance
1.0
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDD = 15 V,
ID = 3.2 A, RG = 6.2 W
tf
9.9
15.1
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = 1.0 A, TJ = 25°C
0.75
8.0
VGS = 0 V, IS = 1.0 A,
dISD/dt = 100 A/ms
QRR
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2
V
ns
5.1
2.9
2.9
2. Surface−mounted on FR4 board using 1 in sq pad size (CU area = 1.127 in sq [2 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
1.0
nC
NTR4170N
TYPICAL CHARACTERISTICS
10 V
2.5 V
1.8 V
2.5
2.0
1.7 V
1.5
1.0
1.6 V
0.5
1.5 V
VGS = 1.4 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
2.0 V
0
0.5
1.0
1.5
2.0
2.5
5.0
4.0
3.0
TJ = 25°C
0
3.0
TJ = −55°C
0.6 0.8
1.0
1.2
1.6
1.4
1.8
2.0
2.2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 3.2 A
TJ = 25°C
0.10
0.08
0.06
0.04
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.08
2.4
TJ = 25°C
0.07
VGS = 2.5 V
0.06
VGS = 4.5 V
0.05
VGS = 10 V
0.04
0.03
0.02
0.01
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.6
VGS = 0 V
1.4
ID = 3.2 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 125°C
2.0
1.0
0.12
0.02
VDS ≥ 10 V
6.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
3.0
7.0
TJ = 25°C
4.5 V
ID, DRAIN CURRENT (A)
3.5
1.2
1.0
TJ = 150°C
1000
TJ = 125°C
100
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
5.0
TJ, JUNCTION TEMPERATURE (°C)
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTR4170N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
600
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
700
500
Ciss
400
300
200
100
0
Coss
Crss
0
4.0
8.0
12
16
20
28 30
24
3.0
2.5
Qgs
2.0
Qgd
1.5
1.0
ID = 3.2 A
TJ = 25°C
0.5
0
0
1.0
2.0
3.0
4.0
5.0
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
3.0
100
IS, SOURCE CURRENT (A)
t, TIME (ns)
3.5
QG, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 3.2 A
VGS = 4.5 V
td(off)
tf
tr
10
td(on)
1.0
QT
4.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1.0
4.5
10
2.0
1.5
1.0
0.5
0
100
VGS = 0 V
TJ = 25°C
2.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTR4170N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTR4170N/D