MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. http://onsemi.com 300 mA, 60 VOLTS RDS(on) = 1.7 W Features • • • • • N−Channel D Silicon Gate for Fast Switching Speeds Low Drive Requirement The SOT−223 Package can be Soldered Using Wave or Reflow The Formed Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die Pb−Free Package is Available G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating 4 Symbol Value Unit Drain−to−Source Voltage VDS 60 V Gate−to−Source Voltage − Non−Repetitive VGS ± 30 V Drain Current ID 300 mAdc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 0.8 W 6.4 mW/°C −65 to 150 °C Operating and Storage Temperature Range TJ, Tstg 1 2 3 MARKING DIAGRAM AND PIN ASSIGNMENT 4 Drain AYW FT960 G G THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath RqJA 156 °C/W TL 260 °C 10 S Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum recommended footprint. TO−261AA CASE 318E STYLE 3 1 Gate 2 Drain 3 Source A = Assembly Location Y = Year W = Work Week G = Pb−Free Package FT960 = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † MMFT960T1 SOT−223 1000 Tape & Reel MMFT960T1G SOT−223 (Pb−Free) 1000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 5 1 Publication Order Number: MMFT960T1/D MMFT960T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 60 − − Vdc Zero Gate Voltage Drain Current (VDS = 60 V, VGS = 0) IDSS − − 10 mAdc Gate−Body Leakage Current (VGS = 15 Vdc, VDS = 0) IGSS − − 50 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 1.0 − 3.5 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.0 A) RDS(on) − − 1.7 W Drain−to−Source On−Voltage (VGS = 10 V, ID = 0.5 A) (VGS = 10 V, ID = 1.0 A) VDS(on) − − − − 0.8 1.7 gfs − 600 − mmhos Ciss − 65 − pF Coss − 33 − Transfer Capacitance Crss − 7.0 − Total Gate Charge Qg − 3.2 − Qgs − 1.2 − Qgd − 2.0 − OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0, ID = 10 mA) ON CHARACTERISTICS (Note 2) Forward Transconductance (VDS = 25 V, ID = 0.5 A) Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) (VGS = 10 V, ID = 1.0 A, VDS = 48 V) Gate−Source Charge Gate−Drain Charge nC 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 5 1 4 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) TJ = 25°C VGS = 10 V 8V 3 7V 2 6V 5V 1 TJ = −55°C 0.8 TJ = 25°C TJ = 125°C 0.6 0.4 VDS = 10 V 0.2 4V 0 0 2 4 6 8 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 10 0 Figure 1. On−Region Characteristics 2 4 6 8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics http://onsemi.com 2 10 MMFT960T1 RDS(on) , DRAIN−SOURCE RESISTANCE (NORMALIZED) RDS(on) , DRAIN−SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 5 VGS = 10 V 4 3 TJ = 125°C 2 25°C 1 0 −55 °C 0 1 1.5 2 ID, DRAIN CURRENT (AMPS) 0.5 2.5 Figure 3. On−Resistance versus Drain Current 10 ID = 1 A VGS = 10 V 1 0.1 −75 −50 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 125 150 Figure 4. On−Resistance Variation with Temperature 250 VGS = 0 V f = 1 MHz TJ = 25°C 200 C, CAPACITANCE (pF) I D, DRAIN CURRENT (AMPS) 225 1 TJ = 125°C TJ = 25°C 0.1 175 150 125 100 Ciss 75 Coss 50 Crss 25 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE−DRAIN DIODE FORWARD VOLTAGE (VOLTS) 0 10 30 2 9 ID = 1 A TJ = 25°C 8 7 6 VDS = 30 V VDS = 48 V 5 4 3 2 1 0 10 15 20 25 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance Variation gFS , TRANSCONDUCTANCE (mhos) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 5. Source−Drain Diode Forward Voltage 5 0 0.5 1 1.5 2 2.5 3 Qg, TOTAL GATE CHARGE (nC) 3.5 VDS = 10 V 1.5 1 TJ = −55°C 125°C 0 4 25°C 0.5 0 Figure 7. Gate Charge versus Gate−to−Source Voltage http://onsemi.com 3 0.5 1 1.5 ID, DRAIN CURRENT (AMPS) Figure 8. Transconductance 2 2.5 MMFT960T1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D b1 4 HE 1 2 3 DIM A A1 b b1 c D E e e1 L1 HE E b e1 e 0.08 (0003) C q A A1 L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° q STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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