ONSEMI MMFT960T1G

MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N−Channel SOT−223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc−dc converters,
solenoid and relay drivers. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
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300 mA, 60 VOLTS
RDS(on) = 1.7 W
Features
•
•
•
•
•
N−Channel
D
Silicon Gate for Fast Switching Speeds
Low Drive Requirement
The SOT−223 Package can be Soldered Using Wave or Reflow
The Formed Leads Absorb Thermal Stress During Soldering
Eliminating the Possibility of Damage to the Die
Pb−Free Package is Available
G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
4
Symbol
Value
Unit
Drain−to−Source Voltage
VDS
60
V
Gate−to−Source Voltage − Non−Repetitive
VGS
± 30
V
Drain Current
ID
300
mAdc
Total Power Dissipation @ TA = 25°C
(Note 1)
Derate above 25°C
PD
0.8
W
6.4
mW/°C
−65 to 150
°C
Operating and Storage Temperature Range
TJ, Tstg
1
2
3
MARKING DIAGRAM AND
PIN ASSIGNMENT
4 Drain
AYW
FT960 G
G
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
RqJA
156
°C/W
TL
260
°C
10
S
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
TO−261AA
CASE 318E
STYLE 3
1
Gate
2
Drain
3
Source
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
FT960 = Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping †
MMFT960T1
SOT−223
1000 Tape & Reel
MMFT960T1G
SOT−223
(Pb−Free)
1000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1
Publication Order Number:
MMFT960T1/D
MMFT960T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 V, VGS = 0)
IDSS
−
−
10
mAdc
Gate−Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
IGSS
−
−
50
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
1.0
−
3.5
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 1.0 A)
RDS(on)
−
−
1.7
W
Drain−to−Source On−Voltage
(VGS = 10 V, ID = 0.5 A)
(VGS = 10 V, ID = 1.0 A)
VDS(on)
−
−
−
−
0.8
1.7
gfs
−
600
−
mmhos
Ciss
−
65
−
pF
Coss
−
33
−
Transfer Capacitance
Crss
−
7.0
−
Total Gate Charge
Qg
−
3.2
−
Qgs
−
1.2
−
Qgd
−
2.0
−
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0, ID = 10 mA)
ON CHARACTERISTICS (Note 2)
Forward Transconductance
(VDS = 25 V, ID = 0.5 A)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
(VGS = 10 V, ID = 1.0 A, VDS = 48 V)
Gate−Source Charge
Gate−Drain Charge
nC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
5
1
4
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 10 V
8V
3
7V
2
6V
5V
1
TJ = −55°C
0.8
TJ = 25°C
TJ = 125°C
0.6
0.4
VDS = 10 V
0.2
4V
0
0
2
4
6
8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
10
0
Figure 1. On−Region Characteristics
2
4
6
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
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2
10
MMFT960T1
RDS(on) , DRAIN−SOURCE RESISTANCE (NORMALIZED)
RDS(on) , DRAIN−SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
5
VGS = 10 V
4
3
TJ = 125°C
2
25°C
1
0
−55 °C
0
1
1.5
2
ID, DRAIN CURRENT (AMPS)
0.5
2.5
Figure 3. On−Resistance versus Drain Current
10
ID = 1 A
VGS = 10 V
1
0.1
−75
−50
−25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
125
150
Figure 4. On−Resistance Variation with Temperature
250
VGS = 0 V
f = 1 MHz
TJ = 25°C
200
C, CAPACITANCE (pF)
I D, DRAIN CURRENT (AMPS)
225
1
TJ = 125°C
TJ = 25°C
0.1
175
150
125
100
Ciss
75
Coss
50
Crss
25
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE−DRAIN DIODE FORWARD VOLTAGE (VOLTS)
0
10
30
2
9
ID = 1 A
TJ = 25°C
8
7
6
VDS = 30 V
VDS = 48 V
5
4
3
2
1
0
10
15
20
25
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
gFS , TRANSCONDUCTANCE (mhos)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. Source−Drain Diode Forward Voltage
5
0
0.5
1
1.5
2
2.5
3
Qg, TOTAL GATE CHARGE (nC)
3.5
VDS = 10 V
1.5
1
TJ = −55°C
125°C
0
4
25°C
0.5
0
Figure 7. Gate Charge versus Gate−to−Source Voltage
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3
0.5
1
1.5
ID, DRAIN CURRENT (AMPS)
Figure 8. Transconductance
2
2.5
MMFT960T1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
b1
4
HE
1
2
3
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
E
b
e1
e
0.08 (0003)
C
q
A
A1
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
q
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMFT960T1/D