MMBF0201NLT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com 300 mAMPS − 20 VOLTS RDS(on) = 1 W N−Channel 3 Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 ms) IDM 300 240 750 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 2 MARKING DIAGRAM AND PIN ASSIGNMENT mAdc ID ID 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 Drain 1 N1 M G G 2 SOT−23 CASE 318 STYLE 21 1 Gate 2 Source N1 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package MMBF0201NLT1 SOT−23 MMBF0201NLT1G Shipping † 3000 Tape & Reel SOT−23 3000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 Publication Order Number: MMBF0201NLT1/D MMBF0201NLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA) mAdc Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) rDS(on) − − 0.75 1.0 1.0 1.4 gFS − 450 − mMhos pF ON CHARACTERISTICS (Note 1) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Ciss − 45 − Output Capacitance (VDS = 5.0 V) Coss − 25 − Transfer Capacitance (VDG = 5.0 V) Crss − 5.0 − td(on) − 2.5 − tr − 2.5 − td(off) − 15 − tf − 0.8 − QT − 1400 − pC A SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 W) Fall Time Gate Charge (See Figure 5) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current IS − − 0.3 Pulsed Current ISM − − 0.75 Forward Voltage (Note 2) VSD − 0.85 − 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 V MMBF0201NLT1 TYPICAL ELECTRICAL CHARACTERISTICS 1.0 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 1.0 0.8 0.6 0.4 125°C 0.2 0 −55 °C 25°C 0 1 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VGS = 5 V 0.8 VGS = 4 V 0.6 VGS = 10, 9, 8, 7, 6 V 0.4 0.2 VGS = 3 V 0 6 0 ON−RESISTANCE (OHMS) 1.5 1.2 0.9 VGS = 4.5 V 0.6 VGS = 10 V 0.3 0 0 0.6 0.4 ID, DRAIN CURRENT (AMPS) 0.2 0.8 1 2.4 2.0 1.5 1.0 0.5 0 0 5 10 15 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 16 1.10 14 1.05 1.00 VDS = 16 V ID = 300 mA 10 8 6 4 ID = 250 mA 0.95 0.90 0.85 0.80 0.75 0.70 2 0 0 20 Figure 4. On−Resistance versus Gate−to−Source Voltage VGS(th) , NORMALIZED VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance versus Drain Current 12 1.4 Figure 2. On−Region Characteristics RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) Figure 1. Transfer Characteristics 0.3 0.6 0.9 1.2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.65 160 450 2000 0.60 −25 3400 0 25 50 75 100 125 Qg, TOTAL GATE CHARGE (pC) TEMPERATURE (°C) Figure 5. Gate Charge Figure 6. Threshold Voltage Variance Over Temperature http://onsemi.com 3 150 MMBF0201NLT1 TYPICAL ELECTRICAL CHARACTERISTICS 100 1.6 VGS = 10 V @ 300 mA C, CAPACITANCE (pF) 80 1.4 1.2 VGS = 4.5 V @ 100 mA 1.0 60 Ciss 40 Coss 20 0.8 Crss 0.6 −50 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 125 0 150 0 5 10 15 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. On−Resistance versus Junction Temperature Figure 8. Capacitance 10 SOURCE CURRENT (AMPS) RDS(on) , NORMALIZED (OHMS) 1.8 1.0 0.1 125°C 0.01 0.001 0 25°C −55 °C 0.3 0.6 0.9 1.2 SOURCE−TO−DRAIN FORWARD VOLTAGE (VOLTS) Figure 9. Source−to−Drain Forward Voltage versus Continuous Current (IS) http://onsemi.com 4 1.4 20 MMBF0201NLT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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