BSS84LT1 Power MOSFET 130 mA, 50 V P−Channel SOT−23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are DC−DC converters, load switching, power management in portable and battery−powered products such as computers, printers, cellular and cordless telephones. http://onsemi.com 130 mA, 50 V RDS(on) = 10 Features • Energy Efficient • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available P−Channel 3 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 50 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 s) ID IDM 130 520 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C RJA 556 °C/W TL 260 °C Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds 2 mA Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 SOT−23 CASE 318 STYLE 21 1 2 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain PD M = Device Code = Date Code PDM 1 Gate 2 Source ORDERING INFORMATION Device BSS84LT1 BSS84LT1G Package Shipping† SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 5 1 Publication Order Number: BSS84LT1/D BSS84LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 50 − − Vdc − − − − − − 0.1 15 60 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Adc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±10 nAdc Gate−Source Threaded Voltage (VDS = VGS, ID = 250 A) VGS(th) 0.9 − 2.0 Vdc Static Drain−to−Source On−Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) RDS(on) − 5.0 10 |yfs| 50 − − mS pF ON CHARACTERISTICS (Note 1) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance VDS = 5.0 Vdc Ciss − 30 − Output Capacitance VDS = 5.0 Vdc Coss − 10 − Transfer Capacitance VDG = 5.0 Vdc Crss − 5.0 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − tf − 8.0 − QT − 6000 − pC IS − − 0.130 A ISM − − 0.520 VSD − − 2.2 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time VDD = −15 Vdc, ID = −2.5 Adc, RL = 50 Turn−Off Delay Time Fall Time Gate Charge ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) VGS = 0 V, IS = 130 mA V 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 0.5 25°C VDS = 10 V 0.5 − 55°C 150°C 0.4 3.25 V 0.4 0.35 0.3 3.0 V 0.25 0.3 0.2 0.2 2.75 V 0.15 0.1 0 VGS = 3.5 V TJ = 25°C 0.45 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 0.6 2.5 V 0.1 2.25 V 0.05 1 1.5 2 2.5 3 3.5 0 4 0 1 2 3 4 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On−Region Characteristics http://onsemi.com 2 9 10 BSS84LT1 9 VGS = 4.5 V 8 150°C 7 6 25°C 5 4 −55°C 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 R DS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS R DS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS TYPICAL ELECTRICAL CHARACTERISTICS 7 150°C VGS = 10 V 6.5 6 5.5 5 4.5 4 25°C 3.5 3 −55°C 2.5 2 0.1 0 0.2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VGS = 10 V ID = 0.52 A 1.4 VGS = 4.5 V ID = 0.13 A 1.2 1 0.8 −5 45 95 8 6 5 4 ID = 0.5 A 3 2 1 0 145 VDS = 40 V TJ = 25°C 7 0 500 TJ, JUNCTION TEMPERATURE (°C) 1000 Figure 6. Gate Charge 1 TJ = 150°C 0.1 25°C −55°C 0.01 0.001 0 1500 QT, TOTAL GATE CHARGE (pC) Figure 5. On−Resistance Variation with Temperature I D , DIODE CURRENT (AMPS) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 0.6 −55 0.6 Figure 4. On−Resistance versus Drain Current Figure 3. On−Resistance versus Drain Current 1.6 0.5 0.4 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.8 0.3 0.5 1.0 1.5 2.0 2.5 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage http://onsemi.com 3 3.0 2000 BSS84LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. BSS84LT1/D