APT60M75JLL
600V 58A 0.075W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
Symbol
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
APT60M75JLL
Parameter
UNIT
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
600
Drain-Source Voltage
Volts
58
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
595
Watts
Linear Derating Factor
4.76
W/°C
VGSM
PD
TJ,TSTG
232
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
58
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA)
600
Volts
58
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.075
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
UNIT
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-7099 Rev - 9-2001
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT60M75JLL
MIN
Test Conditions
Characteristic
TYP
Ciss
Input Capacitance
VGS = 0V
9580
Coss
Output Capacitance
VDS = 25V
1710
Crss
Reverse Transfer Capacitance
f = 1 MHz
108
Qg
Total Gate Charge
VGS = 10V
220
Qgs
Gate-Source Charge
VDD = 0.5 VDSS
51
Qgd
Gate-Drain ("Miller") Charge
ID = ID[Cont.] @ 25°C
98
td(on)
Turn-on Delay Time
tr
td(off)
tf
3
L
A
C
I
N
H
C
N
E
T
O
I
E
T
C MA
N
A OR
V
AD INF
VGS = 15V
23
VDD = 0.5 VDSS
19
ID = ID[Cont.] @ 25°C
53
RG = 0.6W
8
Rise Time
Turn-off Delay Time
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
Characteristic / Test Conditions
TYP
Continuous Source Current (Body Diode)
MAX
58
ISM
Pulsed Source Current
1
(Body Diode)
232
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
857
ns
Q
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
25.9
µC
rr
dv/
dt
Peak Diode Recovery
dv/
dt
5
8
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
RqJC
Junction to Case
RqJA
Junction to Ambient
MIN
TYP
0.21
40
1 Repetitive Rating: Pulse width limited by maximum junction
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.90mH, R = 25W, Peak I = 58A
j
G
L
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS £ -ID Cont. di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
[
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
050-7099 Rev - 9-2001
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058