2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The ASI 2N6199 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz. .112x45° A C B E FEATURES: E ØC • PG = 10 dB Typical at 25 W/175 MHz • ∞ Load VSWR at Rated Conditions • Omnigold™ Metallization System B D H I J G #8-32 UNC-2A F E MAXIMUM RATINGS 4.0 A IC MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 VCB 65 V B .980 / 24.89 C .370 / 9.40 .385 / 9.78 PDISS 40 W @ TC = 25 °C D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 TJ -55 °C to +200 °C TSTG -55 °C to +150 °C θJC 4.4 °C/W CHARACTERISTICS .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10864 TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 200 mA 65 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηc VCE = 28 V 2.0 IC = 200 mA --- 10 f = 1.0 MHz POUT = 25 W f = 175 MHz 50 8.5 50 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA pF dB % REV.A 1/1