C2M60-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500”6L FLG The C2M60-28 is Designed for Class A, B and C Power Amplifier Applications in Military UHF Radios. C A E C E 2x ØN FU LL R D FEATURES: E • PG = 10 dB Typical at 70 W/400 MHz • ∞ Load VSWR at Rated Conditions • Omnigold™ Metallization System VCB 60 V PDISS 220 W @ TC = 25 C O O O O TSTG -55 C to +200 C θJC 0.8 C/W L M IN IM U M inche s / m m inche s / m m A .150 / 3.43 .160 / 4.06 M AX IM U M .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 I O J I D IM H -55 C to +200 C TJ M K H B 8.0 A E E .725/18,42 F G MAXIMUM RATINGS IC B B J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M .120 / 3.05 N .135 / 3.43 O CHARACTERISTICS SYMBOL ORDER CODE: ASI10799 O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 60 V BVCEO IC = 50 mA 33 V BVEBO IE = 20 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 28 V IC = 1.0 A 20 f = 1.0 MHz POUT = 70 W f = 400 MHz 9.0 50 10.0 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 120 --- 75 pF dB % REV. A 1/1