MRF315A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF315A is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: • PG = 9.0 dB min. at 45 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold™ Metalization System B MAXIMUM RATINGS D ØC 65 V VCEO 35 V H I F O O O O TJ -65 C to +200 C TSTG -65 C to +150 C θJC 2.3 C/W MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J O CHARACTERISTICS G E 75 W ORDER CODE: ASI10757 O TC = 25 C NONETEST CONDITIONS SYMBOL B #8-32 UNC-2A 4.0 V PDISS E J VCBO VEBO C E 5.0 A IC A MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVCBO IC = 10 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 30 V PG ηC Ψ VCE = 28 V IC = 500 mA 5.0 f = 1.0 MHz POUT = 45 W f = 150 MHz 9.0 50 11 60 4.0 mA 200 --- 65 pF dB % 30:1 minimum without degration in output power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1