2N696 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N696 is a Silicon NPN Transistor, mounted in a hermetically sealed metal package, designed for general purpose amplifier and switching applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation SYMBOL VCBO VCER VEBO Power Dissipation (TC=25°C) PD PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance Thermal Resistance 60 UNITS V 40 V 5.0 V 0.6 W 2.0 W -65 to +200 ΘJA ΘJC °C 292 °C/W 87.5 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO BVCBO BVCER BVEBO VCE(SAT) VBE(SAT) hFE TEST CONDITIONS VCB=30V VCB=30V, TA=150°C IC=100µA IC=100mA, RBE=10Ω IE=100µA MIN fT Cob VCB=10V, IE=0, f=1.0MHz UNITS µA 100 µA 60 V 40 V 5.0 V IC=150mA, IB=15mA IC=150mA, IB=15mA VCE=10V, IC=150mA VCE=10V, IC=50mA, f=20MHz MAX 1.0 20 1.5 V 1.3 V 60 40 MHz 35 (SEE REVERSE SIDE) pF R0 2N696 NPN SILICON TRANSISTOR TO-39 PACKAGE - MECHANICAL OUTLINE A B D SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J C E F G H LEAD #2 LEAD #1 LEAD #3 45° J I R1 LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.335 0.370 8.51 9.40 0.315 0.335 8.00 8.51 0.040 1.02 0.240 0.260 6.10 6.60 0.500 12.70 0.016 0.021 0.41 0.53 0.200 5.08 0.100 2.54 0.028 0.034 0.71 0.86 0.029 0.045 0.74 1.14 TO-39 (REV: R1)