Central CMPD2003 CMPD2004 CMPD2004S TM Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. SOT-23 CASE The following configurations are available: CMPD2003 CMPD2004 CMPD2004S SINGLE SINGLE DUAL, IN SERIES MARKING CODE: A82 MARKING CODE: D53 MARKING CODE: DB6 MAXIMUM RATINGS (TA=25oC) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µs Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ,Tstg ΘJA CMPD2004 CMPD2003 CMPD2004S 200 240 250 300 200 200 250 225 625 625 4000 4000 1000 1000 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) CMPD2004 CMPD2003 CMPD2004S SYMBOL TEST CONDITIONS MIN MAX MIN MAX BVR IR=100 µA 250 300 IR VR=200V 100 IR VR=200V, TA=150oC 100 IR VR=240V 100 o IR VR=240V, TA=150 C 100 VF IF=100mA 1.0 1.0 132 UNITS V V mA mA mA mA mA mW oC oC/W UNIT V nA µA nA µA V SYMBOL VF CT trr CMPD2003 TEST CONDITIONS MIN MAX IF=200mA 1.25 VR=0, f=1 MHz 5.0 IF=IR=30mA, RECOV. TO 3.0mA, RL=100Ω 50 CMPD2004 CMPD2004S MIN MAX 5.0 50 UNIT V pF ns All dimensions in inches (mm). NO CONNECTION A A2 C1 C A1, C2 CMPD2003 CMPD2004 CMPD2004S R2 133