Central CMPT5086 CMPT5087 TM Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise. Marking Codes are C2P and C2Q Respectively. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD 50 50 3.0 50 350 UNITS V V V mA mW TJ,Tstg ΘJA -65 to +150 357 oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob hfe TEST CONDITIONS VCB=10V VCB=35V IC=100µA IC=1.0mA IE=100µA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500µA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz CMPT5086 MIN MAX 10 50 50 50 3.0 0.30 0.85 150 500 150 150 40 4.0 150 600 178 CMPT5087 MIN MAX 10 50 50 50 3.0 0.30 0.85 250 800 250 250 40 4.0 250 900 UNITS nA nA V V V V V MHz pF SYMBOL NF NF TEST CONDITIONS VCE=5.0V, IC=20mA, RS=10kΩ f=10Hz to 15.7kHz VCE=5.0V, IC=100µA, RS=3.0kΩ, f=1.0kHz CMPT5086 MIN MAX 3.0 3.0 CMPT5087 MIN MAX 2.0 2.0 UNITS dB dB All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 179