CMST5086 CMST5087 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST5086, CMST5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for applications requiring high gain and low noise. MARKING CODES: CMST5086: 2PC CMST5087: 2QC SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMST5086 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=10V 10 ICBO VCB=35V 50 BVCBO IC=100μA 50 BVCEO IC=1.0mA 50 BVEBO IE=100μA 3.0 VCE(SAT) IC=10mA, IB=1.0mA 0.30 VBE(SAT) IC=10mA, IB=1.0mA 0.85 hFE VCE=5.0V, IC=0.1mA 150 500 hFE VCE=5.0V, IC=1.0mA 150 hFE VCE=5.0V, IC=10mA 150 fT VCE=5.0V, IC=500μA, f=20MHz 40 Cob hfe NF NF VCB=5.0V, IE=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=20mA, RS=10kΩ f=10Hz to 15.7kHz VCE=5.0V, IC=100μA, RS=3.0kΩ f=1.0kHz UNITS V V V mA mW °C °C/W 50 50 3.0 50 275 -65 to +150 455 CMST5087 MIN MAX 10 50 50 50 3.0 0.30 0.85 250 800 250 250 - UNITS nA nA V V V V V 150 4.0 600 40 250 4.0 900 MHz pF - 3.0 - 2.0 dB - 3.0 - 2.0 dB R3 (9-February 2010) CMST5086 CMST5087 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMST5086: 2PC CMST5087: 2QC R3 (9-February 2010) w w w. c e n t r a l s e m i . c o m