PROCESS CP221 Central Small Signal Transistor NPN- High Voltage Darlington Transistor Chip TM Semiconductor Corp. PROCESS DETAILS Process EPITAXIAL BASE Die Size 39.5 X 39.5 MILS Die Thickness 9.8 MILS Base Bonding Pad Area 3.9 x 5.1 MILS Emitter Bonding Pad Area 7.9 x 3.9 MILS Top Side Metalization Al - 24,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 7,290 PRINCIPAL DEVICE TYPES CZT2000 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP221 Typical Electrical Characteristics R1 (1-August 2002)