BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (RF) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz. Typical applications for these PIN Diodes are switches and attenuators in wireless, mobile and TV-systems. 2 3 1 1 2 18380 3 Features Mechanical Data • High voltage current controlled RF resistor • Small diode capacitance • Low series inductance • Low forward resistance • Improved performance due to two separate dice • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Case: SOT-323 Weight: approx. 5.7 mg Packaging Codes/Options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box Applications • • • • For frequencies up to 3 GHz RF-signal tuning Signal attenuator and switches Mobile, wireless and TV-Applications Parts Table Part BAR64V-05W-V Ordering code Marking Remarks BAR64V-05W-V-GS18 or BAR64V-05W-V-GS08 DW5 Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Reverse voltage VR 100 V Forward current IF 100 mA Tj 150 °C Tstg - 55 to + 150 °C Junction temperature Storage temperature range Document Number 81836 Rev. 1.3, 29-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Unit www.vishay.com 1 BAR64V-05W-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Test condition Symbol Min. Reverse voltage Parameter IR = 10 µA VR 100 Reverse current VR = 50 V IR Unit 50 nA V IF = 50 mA VF CD 0.5 f = 1 MHz, VR = 1 V CD 0.37 0.5 pF f = 1 MHz, VR = 20 V CD 0.23 0.35 pF f = 100 MHz, IF = 1 mA rf 10 20 Ω Ω 1.1 V pF f = 100 MHz, IF = 10 mA rf 2.0 3.8 f = 100 MHz, IF = 100 mA rf 0.8 1.35 IF = 10 mA, IR = 6 mA, iR = 3 mA trr 1.8 µs LS 1 nH Forward resistance Charge carrier life time Max. f = 1 MHz, VR = 0 Forward voltage Diode capacitance Typ. Series inductance Ω Typical Characteristics Tamb = 25 °C, unless otherwise specified 100.00 I F - Forward Current (mA) rf - Forward Ressistance (Ω) 100.0 f = 100 MHz 10.0 1.0 0.1 0.1 10.00 1.00 0.10 0.01 1 10 100 0.5 IF - Forward Current (mA) 18342 Figure 1. Forward Resistance vs. Forward Current 0.8 0.9 1.0 12 f = 1 MHz I F = 10 mA 10 I F - Forward Current (mA) 0.45 CD - Diode Capacitance (pF) 0.7 Figure 3. Forward Current vs. Forward Voltage 0.50 0.40 0.35 0.30 0.25 0.20 0.15 0.10 8 I R = 6 mA 6 i rr = 3 mA 4 2 0 -2 -4 -6 0.05 -8 - 500 0.00 0 18334 4 8 12 16 20 24 28 VR - Reverse Voltage (V) Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 0.6 VF - Forward Voltage (V) 18326 18338 500 1500 2500 3500 trr - Reverse Recovery Time (ns) Figure 4. Typical Charge Recovery Curve For technical questions within your region, please contact one of the following: Document Number 81836 [email protected], [email protected], [email protected] Rev. 1.3, 29-Oct-10 BAR64V-05W-V Vishay Semiconductors 0 |S21|² - Insertion Loss (dB) - 0.5 IF = 3mA -1 IF = 10 mA IF = 100 mA IF = 1 mA - 1.5 IF = 0.5 mA -2 - 2.5 -3 0 0.5 1 1.5 2 2.5 3 3.5 f - Frequency (GHz) 21027 Figure 5. Insertion Loss of One Diode Inserted in Series with 50 Ω Strip Line |S21|² = |S12 |² - Isolation (dB) 0 -5 - 10 - 15 VR = 0, diode zero-biased - 20 - 25 0 0.5 1 1.5 2 2.5 3 3.5 f - Frequency ( GHz ) 21028 IP2 - Second Order Intercept Point (dBm) Figure 6. Isolation of One Diode Inserted in Series with 50 Ω Strip Line 150 100 f = 1.8 GHz f = 0.9 GHz 50 0 0.1 21029 1 10 IF - Forward Current (mA) Figure 7. Second Order Intercept Point for One Diode Inserted in 50 Ω Strip Line Document Number 81836 Rev. 1.3, 29-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BAR64V-05W-V Vishay Semiconductors 8° 0° 0.15 (0.006) 0.08 (0.003) 0.0 (0.000) 0.1 (0.004) 2.0 (0.079) 0.8 (0.031) 1.1 (0.043) 2.2 (0.087) 0.8 (0.031) 1.0 (0.039) Package Dimensions in millimeters (inches): SOT-323 0.46 (0.018) 0.26 (0.010) 0.525 (0.021) ref. 0.4 (0.016) 0.2 (0.008) 2.45 (0.096) 1.35 (0.053) 0.65 (0.026) typ 1.15 (0.045) 2.15 (0.085) foot print recommendation: 0.6 (0.024) 1.4 (0.055) Document no.: 6.541-5040.02-4 Rev. 1 - Date: 06. April 2010 0.65 (0.026) 1.8 (0.071) 0.8 (0.031) 1.2 (0.047) 21113 1.3 (0.051) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 81836 [email protected], [email protected], [email protected] Rev. 1.3, 29-Oct-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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