KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W (TC=25°C) • Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings - 30 Units V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -3 A PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = - 500µA, IE = 0 Min. - 30 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 30 BVEBO Emitter-Base Breakdown Voltage IE = - 1mA, IC = 0 -5 ICBO Collector Cut-off Current VCB = - 20V, IE = 0 IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE1 hFE2 DC Current Gain VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 2.5A VCE(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.8 V VBE(on) Base-Emitter ON Voltage VCE = - 2V, IC = - 0.5A - 0.75 - 1.0 V fT Current Gain Bandwidth Product VCE= - 2V, IC = - 0.5A 100 MHz Cob Output Capacitance VCB = - 10V, IE = 0, f = 1MHz 40 pF V V 70 25 - 1.0 µA - 1.0 µA 240 hFE Classification Classification O Y hFE1 70 ~ 140 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA473 Typical Characteristics -3.2 1000 IB = -40mA IB = -35mA IB = -30mA -2.4 VCE = -2V IB = -25mA -2.0 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -2.8 IB = -20mA -1.6 IB = -15mA -1.2 IB = -10mA -0.8 IB = -5mA -0.4 100 10 IB = -3mA -0.0 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 1 -0.01 -10 -0.1 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic -10 Figure 2. DC current Gain -10 -3.6 VCE = -2V IC = 10 IB IC[A], COLLECTOR CURRENT -3.2 VBE(sat) -1 -0.1 V CE(sat) -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 -0.01 -0.01 -0.1 -1 -0.0 -0.0 -10 IC[A], COLLECTOR CURRENT -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 -10 IC MAX. (Pulse) f=1MHz IE=0 *1ms IC[A], COLLECTOR CURRENT Cob[pF], CAPACITANCE -1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 100 10 IC MAX. (DC) *10ms *50ms Thermal limitation TC =25℃ -1 S/B limitation * Single Pulse TC =25℃ -0.1 1 -1 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2000 Fairchild Semiconductor International -10 -100 -100 V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSA473 Typical Characteristics (Continued) PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA473 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E