KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W (TC=25°C) TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC Collector Dissipation (TC=25°C) TJ TSTG Value 100 Units V 60 V 5 V 5 A 30 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 100 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC = 20mA, IB = 0 60 BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 ICBO Collector Cut-off Current VCB = 100V, IE = 0 hFE DC Current Gain VCE = 10V, IC = 1.0A VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 0.5A 2.0 VBE(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1.5 fT Current Gain Bandwidth Product VCE = 10V, IC = 0.3A 20 MHz VBE(on) Base-Emitter ON Voltage VCE = 10V, IE = 1.0A 0.75 V V V 5 70 mA 240 V V hFE Classification Classification O Y hFE 70 ~ 140 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD73 Typical Characteristics 1000 2.0 IB = 14mA VCE = 10V 1.6 IB = 12mA 1.4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1.8 IB = 10mA 1.2 1.0 IB = 8mA 0.8 IB = 6mA 0.6 IB = 4mA 0.4 100 IB = 2mA 0.2 10 0.01 0.0 0 2 4 6 8 10 12 14 16 18 20 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 1000 IC = 10 IB f=1MHz IE=0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain V BE(sat) 0.1 VCE (sat) 0.01 0.01 0.1 1 100 10 10 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 80 10 Thermal limitation *10ms 70 Thermal limitation *200ms S/B limitation S/B limitation 1 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 1 1 60 50 40 30 20 10 0 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 100 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSD73 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E