FAIRCHILD KSD73Y

KSD73
KSD73
Low Frequency High Power Amplifier
• Collector-Base Voltage : VCBO = 100V
• Collector Current : IC = 5A
• Collector Dissipation : PC = 30W (TC=25°C)
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PC
Collector Dissipation (TC=25°C)
TJ
TSTG
Value
100
Units
V
60
V
5
V
5
A
30
W
Junction Temperature
150
°C
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
100
Typ.
Max.
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 20mA, IB = 0
60
BVEBO
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
5
ICBO
Collector Cut-off Current
VCB = 100V, IE = 0
hFE
DC Current Gain
VCE = 10V, IC = 1.0A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 5A, IB = 0.5A
2.0
VBE(sat)
Base-Emitter Saturation Voltage
IC = 5A, IB = 0.5A
1.5
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.3A
20
MHz
VBE(on)
Base-Emitter ON Voltage
VCE = 10V, IE = 1.0A
0.75
V
V
V
5
70
mA
240
V
V
hFE Classification
Classification
O
Y
hFE
70 ~ 140
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD73
Typical Characteristics
1000
2.0
IB = 14mA
VCE = 10V
1.6
IB = 12mA
1.4
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1.8
IB = 10mA
1.2
1.0
IB = 8mA
0.8
IB = 6mA
0.6
IB = 4mA
0.4
100
IB = 2mA
0.2
10
0.01
0.0
0
2
4
6
8
10
12
14
16
18
20
0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
1000
IC = 10 IB
f=1MHz
IE=0
Cob[pF], CAPACITANCE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 2. DC current Gain
V BE(sat)
0.1
VCE (sat)
0.01
0.01
0.1
1
100
10
10
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
80
10
Thermal limitation
*10ms
70
Thermal limitation
*200ms
S/B limitation
S/B limitation
1
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
1
1
60
50
40
30
20
10
0
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
100
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
KSD73
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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CoolFET™
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E2CMOS™
FACT™
FACT Quiet Series™
FAST®
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GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
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SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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INTERNATIONAL.
As used herein:
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E