KSA1695 KSA1695 Audio Power Amplifier • • • • High Current Capability : IC = -15A High Power Dissipation Wide S.O.A Complement to KSC4468 TO-3P 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -160 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) -8 A ICP Collector Current (Pulse) -16 A -140 V -6 V PC Collector Dissipation (TC=25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=-5mA, IE=0 Min. -160 Typ. Max. Units V -140 V -6 V BVCEO Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 ICBO Collector Cut-off Current VCB=-80V, IE=0 -0.1 mA IEBO Emitter Cut-off Current VEB=-4V, IC=0 -0.1 mA hFE1 * DC Current Gain VCE=-5V, IC=-1A 60 hFE2 DC Current Gain VCE=-5V, IC=-6A 20 VCE(sat) Collector-Emitter Saturation Voltage IC=-5A, IB=-0.5A -2.5 V VBE(on) Base-Emitter ON Voltage VCE=-5V, IC=-1A -1.5 V fT Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz Cob Output Capacitance VCB=-10V, f=1MHz 300 pF tON Turn ON Time 0.25 µs tF Fall Time 0.53 µs tSTG Storage Time VCC=-20V, IC = 1A = 10IB1 = -10IB2 RL = 20Ω 1.61 µs 200 * Pulse Test : PW=20us *hFE Classification Classification O Y hFE1 60 ~ 120 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1695 Typical Characteristics -18 1000 VCE = -5V IB = -500mA IB = -450mA IB = -400mA IB = -350mA IB = -300mA IB = -250mA IB = -200mA -14 -12 -10 -8 IB = -150mA -6 IB = -100mA -4 IB = -50mA hFE, DC CURRENT GAIN Ic[A], COLLECTOR CURRENT -16 100 10 -2 IB = 0 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 1 -0.01 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -10 -100 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -10 Ic = 10 IB Ic = 10 IB VCE(sat)[V], SATURATION VOLTAGE VBE(sat)[V], SATURATION VOLTAGE -0.1 -1 -0.1 -1 -0.1 -0.01 -0.01 -0.1 -1 -10 -0.1 IC[A], COLLECTOR CURRENT -1 -10 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage -100 -12 10 0m IC MAX. (Pulse) -8 -6 -4 -2 -10 IC MAX. (DC) s DC -1 -0.1 VCEO MAX IC[A], COLLECTOR CURRENT -10 ms 10 IC[mA], COLLECTOR CURRENT VCE = -5V *SINGLE NONREPETITIVE o PULSE TC=25[ C] -0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 VBE [V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2000 Fairchild Semiconductor International -1.6 -0.01 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSA1695 Typical Characteristics (Continued) 140 PC[W], POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1695 Package Demensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E