FJY4004R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to FJY3004R Eqivalent Circuit C C S54 E B E B SOT - 523F Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA TSTG Storage Temperature Range -55~150 °C TJ Junction Temperature 150 °C PC Collector Power Dissipation, by RθJA 200 mW Max Units 600 °C/W * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol RθJA Parameter Thermal Resistance, Junction to Ambient * Minimum land pad size. Electrical Characteristics* Symbol TC = 25°C unless otherwise noted Parameter Test Condition MIN Typ MAX Units V(BR)CBO Collector-Emitter Breakdown Voltage IC = -10 uA, IE = 0 -50 V V(BR)CEO Collector-Base Breakdown Voltage IC = -100 uA, IB = 0 -50 V ICBO Collector-Cutoff Current VCB = -40 V, IE = 0 hFE DC Current Gain VCE = -5 V, IC = -5mA VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -0.5 mA fT Current Gain - Bandwidth Product VCE = -10V, IC = -5 mA Ccb Output Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz VI(off) Input Off Voltage VCE = -5 V, IC = -100uA VI(on) Input On Voltage VCE = -0.3V, IC = -2mA -3.0 V R1 Input Resistor 32 47 62 KΩ R1/R2 Resistor Ratio 0.9 1.0 1.1 -0.1 uA 68 -0.3 V 200 MHz 5.5 pF -0.5 V * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation FJY4004R Rev. A 1 www.fairchildsemi.com FJY4004R PNP Epitaxial Silicon Transistor November 2006 Figure 1. DC current Gain Figure 2. Input On Voltage 1000 -100 VCE = - 0.3V R1 = 47 K R2 = 47 K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN VCE = - 5V R1 = 47 K R2 = 47 K 100 -10 -100 -1 -0.1 -0.1 10 -1 -10 -1000 -1 IC[mA], COLLECTOR CURRENT -10 -100 IC[mA], COLLECTOR CURRENT Figure 3. Input off Voltage Figure 4. Power Derating -1000 240 PC[mW], POWER DISSIPATION IC [µA], COLLECTOR CURRENT 280 VCE = - 5V R1 = 47 K R2 = 47 K -100 -10 -0.0 160 120 80 40 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -2.4 25 50 75 100 125 150 175 o VI(off)[V], INPUT OFF VOLTAGE Ta[ C], AMBIENT TEMPERATURE 2 FJY4004R Rev. A 200 www.fairchildsemi.com FJY4004R PNP Epitaxial Silicon Transistor Typical Performance Characteristics FJY4004R PNP Epitaxial Silicon Transistor Package Dimensions SOT-523F Dimensions in Millimeters 3 FJY4004R Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22