KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A IB Base Current 0.3 A PC PC * Collector Power Dissipation 500 1,000 mW mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C 2 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Mounted on Ceramic Board (250mm x0.8mm) Electrical Characteristics * T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10µA, IB = 0 30 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V ICBO Collector Cut-off Current VCB = 30V, IE = 0 100 nA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 100 nA hFE DC Current Gain VCE = 2V, IC = 500mA VCE (sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 30mA 2.0 V VBE (on) Base-Emitter On Voltage VCE = 2V, IC = 500mA 1.0 V fT Current Gain Bandwidth Product VCE = 2V, IC = 500mA 120 MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 40 pF 100 320 * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation KSC2883 Rev. B3 1 www.fairchildsemi.com KSC2883 NPN Epitaxial Silicon Transistor November 2006 Classification O Y hFE 100 ~ 200 160 ~ 320 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2883 KSC2883 SOT-89 13” -- 4,000 2 KSC2883 Rev. B3 www.fairchildsemi.com KSC2883 NPN Epitaxial Silicon Transistor hFE Classification Figure 1. Static Characteristic Figure 2. Base-Emitter On Voltage 1.6 1.6 IB = 8mA IB = 10mA VCE = 2V IB = 6mA IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 1.4 1.2 IB = 5mA IB = 4mA 0.8 IB = 3mA IB = 2mA 0.4 IB = 1mA 2 4 6 8 10 12 14 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.0 0 1.2 16 0.4 0.8 1.2 1.6 VBE[V], Turn On VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage 10000 VCE(SAT), Collector-Emitter Voltage(V) hFE, DC CURRENT GAIN VCE = 2V 1000 100 10 1 1 10 100 1000 Ic=10*Ib 1 0.1 0.01 10 10000 Figure 5. Safe Operating Area Figure 6. Power Derating 1.6 10 IC MAX. (Pulse) 100ms PC [W], POWER DISSIPATION 10ms IC MAX. (DC) 1ms 1 1s 0.1 VCEO MAX. IC [A], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT o Ta = 25 C Single Pulse 0.01 0.1 100 1.2 M ou nt ed 0.8 0.4 on Ce ra m ic Bo ar d (2 50 m m 2 x0 .8 m m ) 0.0 1 10 0 100 50 100 150 200 o TA [ C], AMBIENT TEMPERATURE VCE [V], COLLECTOR-EMITTER VOLATGE 3 KSC2883 Rev. B3 www.fairchildsemi.com KSC2883 NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSC2883 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters 4 KSC2883 Rev. B3 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21 5 KSC2883 Rev. B3 www.fairchildsemi.com KSC2883 NPN Epitaxial Silicon Transistor FAIRCHILD SEMICONDUCTOR TRADEMARKS