FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -5 A PC Power Dissipation (Ta = 25°C) 0.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C Electrical Characteristics T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -50µA, IE = 0 -30 V BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 -20 V BVEBO Emitter-Base Breakdown Voltage IE = -50µA, IC = 0 -6 ICBO Collector-Cutoff Current VCB = -20V, VB = 0 IEBO Emitter-Cutoff Current VEB = -5V, IC = 0 hFE DC Current Gain VCE = -2V, IC =-0.5A VCE (sat) Collector-Emitter Saturation Voltage IC = -4A, IB = -0.1A -1.0 V VBE (sat) Base-Emitter Saturation Voltage IC = -4A, IB = -0.1A -1.5 V ©2005 Fairchild Semiconductor Corporation FJC1386 Rev. C1 1 80 V -0.5 µA -0.5 µA 390 www.fairchildsemi.com FJC1386 PNP Epitaxial Silicon Transistor July 2005 Symbol RθJA Ta = 25°C unless otherwise noted Parameter Thermal Resistance, Junction to Ambient Max. Units 250 °C/W hFE Classification Classification P Q R hFE 80 ~ 180 120 ~ 270 180 ~ 390 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1386 FJC1386 SOT-89 13” -- 4,000 FJC1386 Rev. C1 2 www.fairchildsemi.com FJC1386 PNP Epitaxial Silicon Transistor Thermal Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain -1400 1000 VCE = - 2V -1200 o Ta = 125 C IB = -6mA -1000 IB = -5mA -800 IB = -4mA -600 IB = -3mA -400 IB = -2mA -200 0 o Ta = 25 C hFE, DC CURRENT GAIN IC [mA], COLLECTOR CURRENT IB = -7mA o Ta = - 40 C 100 IB = -1mA 0 -2 -4 -6 -8 -10 -12 -14 10 -10m -16 -100m VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 4. Base-Emitter Saturation Voltage -10 IC = 10 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE -10 -1 o Ta = 125 C -100m o Ta = 25 C o Ta = - 40 C -10m -1m -1m -10m -100m -1 IC = 10 IB -1 o Ta = - 40 C o Ta = 125 C -0.1 -1m -10 -100m -1 -10 IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Power Derating -1.8 PC [W], COLLECTOR POWER DISSIPATION 0.7 VCE = - 2V -1.6 IC [A], COLLECTOR CURRENT o Ta = 25 C -10m IC [A], COLLECTOR CURRENT -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 125°C 25°C - 40°C -0.2 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175 Ta [°C], AMIBIENT TEMPERATURE VBE [V], BASE-EMITTER VOLTAGE FJC1386 Rev. C1 -10 IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage -0.0 -0.0 -1 3 www.fairchildsemi.com FJC1386 PNP Epitaxial Silicon Transistor Typical Performance Characteristics FJC1386 PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters FJC1386 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 FJC1386 Rev. 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