KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Ratings Units VCBO Collector-Base Voltage Parameter 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC P C* Collector Power Dissipation 500 1.3 mW W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C 2 Mounted on Ceramic Board (250mm x 0.8mm) Electrical Characteristics T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 30 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 25 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V ICBO Collector Cut-off Current VCB = 20V, IE = 0 100 nA IEBO Emitter Cut-off Current VBE = 4V, IC = 0 100 nA hFE1 hFE2 DC Current Gain VCE = 2V, IC = 0.1A VCE = 2V, IC = 1.5A VCE (sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 75mA 0.18 0.4 V VBE (sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 75mA 0.85 1.2 V ©2005 Fairchild Semiconductor Corporation KSD1621 Rev. B2 1 100 65 560 www.fairchildsemi.com KSD1621 NPN Epitaxial Silicon Transistor July 2005 Symbol (Continued) Ta = 25°C unless otherwise noted Parameter Test Condition fT Current Gain Bandwidth product Min. Typ. Max. Units VCE = 10V, IC = 50mA 150 MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 19 pF tON Turn On Time * 60 ns tSTG Storage Time * 500 ns tF Fall Time * VCC = 12V, VBE = 5V IB1 = -IB2 = 25mA IC = 0.5A, RL = 25Ω 25 ns hFE Classification Classification R S T U hFE 100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1621 KSD1621 SOT-89 13” -- 4,000 KSD1621 Rev. B2 2 www.fairchildsemi.com KSD1621 NPN Epitaxial Silicon Transistor Electrical Characteristics Figure 1. Static Characteristic IB = 50mA IB = 30mA 1000 IB = 20mA VCE= 2V 1.6 IB = 10mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.0 Figure 2. DC Current Gain IB = 8mA 1.2 IB = 6mA 0.8 IB = 4mA 0.4 0.0 0.0 IB = 2mA IB = 0 0.2 0.4 0.6 0.8 100 10 1 0.01 1.0 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 4. Base-Emitter On Voltage 3.2 10 VCE = 2V IC = 10 IB 2.8 IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 3. DCollector-Emitter Saturation Voltage 1 0.1 0.01 0.01 0.1 1 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0.0 10 1000 IE=0 f = 1MHz 100 10 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE KSD1621 Rev. B2 0.4 0.6 0.8 1.0 1.2 Figure 6. Current Gain Bandwidth Product fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 5. Collector Output Capacitance 1 0.1 0.2 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Cob[pF], CAPACITANCE 1 1000 VCE = 10V 100 10 0.1 1 IC[A], COLLECTOR CURRENT 3 www.fairchildsemi.com KSD1621 NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) Figure 7. Safe Operating Area Figure 8. Power Derating 10 1.6 IC MAX. (Pulse) 50 (2 2 m 8m 0. Hea t Sin k × No 0.4 m ) m PC[W], POWER DISSIPATION d IC[A], COLLECTOR CURRENT ar Bo 100 ic 10 m ra 0.8 0.0 1 0 50 100 150 200 o Ta[ C], AMBIENT TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE KSD1621 Rev. B2 Ce 0.01 0.1 on o Ta=25 C Single Pulse Mounted on Ceramic Board 2 (250mm × 0.8mm) ed 0.1 1.2 nt 1 ou M s 0m 10 s 1m s m 10 IC MAX. (DC) 4 www.fairchildsemi.com KSD1621 NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSD1621 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters KSD1621 Rev. B2 5 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 6 KSD1621 Rev. B2 www.fairchildsemi.com KSD1621 NPN Epitaxial Silicon Transistor TRADEMARKS