Freescale Semiconductor Technical Data Document Number: MRF5S9100 Rev. 3, 7/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pout = 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.5 dB Drain Efficiency — 28% ACPR @ 750 kHz Offset — - 46.8 dBc @ 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • N Suffix Indicates Lead - Free Terminations • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 880 MHz, 20 W AVG., 26 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S9100NR1(MR1) CASE 1484 - 02, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S9100NBR1(MBR1) Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, + 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 336 1.92 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 20 W CW RθJC 0.52 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 µA) VGS(th) 2 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 950 mAdc) VGS(Q) — 3.7 — Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) — 0.21 0.3 Vdc gfs — 7 — S Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 70 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.2 — pF Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. N - CDMA, f = 880 MHz, Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 18 19.5 — dB Drain Efficiency ηD 26 28 — % ACPR — - 46.8 - 45 dBc IRL — - 19 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally input matched. MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 2 RF Device Data Freescale Semiconductor B1 VBIAS + C22 + C21 + C20 C19 VSUPPLY C17 C18 C6 C8 DUT Z1 Z2 C1 Z3 Z4 Z5 C3 C4 Z6 Z7 + + C15 + C13 C14 L2 L1 RF INPUT C16 Z9 RF OUTPUT C10 Z11 Z10 Z12 Z13 Z15 Z14 Z8 C12 C2 Z1, Z15 Z2 Z3 Z4 Z5 Z6, Z11 Z7 C7 C5 0.200″ x 0.080″ Microstrip 0.105″ x 0.080″ Microstrip 0.954″ x 0.080″ Microstrip 0.115″ x 0.220″ Microstrip 0.375″ x 0.220″ Microstrip 0.200″ x 0.220″ x 0.620″ Taper 0.152″ x 0.620″ Microstrip Z8 Z9 Z10 Z12 Z13 Z14 PCB C9 C11 0.163″ x 0.620″ Microstrip 0.238″ x 0.620″ Microstrip 0.077″ x 0.620″ Microstrip 0.381″ x 0.220″ Microstrip 0.114″ x 0.220″ Microstrip 1.052″ x 0.080″ Microstrip Arlon GX0300, 0.030″, εr = 2.55 Figure 1. MRF5S9100NR1(NBR1)/MR1(MBR1) Test Circuit Schematic Table 6. MRF5S9100NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead, Surface Mount 2743019447 Fair- Rite C1, C12, C18 18 pF Chip Capacitors 100B180JP 500X ATC C2 0.6- 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson Dielectrics C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson Dielectrics C4 6.2 pF Chip Capacitor 100B6R2JP 500X ATC C5, C6 12 pF Chip Capacitors 100B120JP 500X ATC C7, C8 11 pF Chip Capacitors 100B110JP 500X ATC C9, C10 5.1 pF Chip Capacitors 100B5R1JP 500X ATC C13 470 mF, 63 V Electrolytic Capacitor NACZF471M63V Nippon C14, C15 22 mF, 50 V Tantalum Capacitors T491X226K035AS Kemet C16, C17, C19 0.56 mF, 50 V Chip Capacitors C1825C564J5GAC Kemet C20, C21 47 mF, 16 V Tantalum Capacitors T491D4T6K016AS Kemet C22 100 mF, 50 V Electrolytic Capacitor 515D107M050BB6A Multicomp L1 7.15 nH Inductor 1606- 7 CoilCraft L2 22 nH Inductor B07T- 5 CoilCraft MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 RF Device Data Freescale Semiconductor 3 C15 C14 C21 C20 VGG C13 C22 B1 C18 C19 C16 C6 C8 VDD C17 C10 C2 C3 C5 WB2 WB1 C4 L1 CUT OUT AREA C1 C12 L2 C9 C7 C11 MRF9100M Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S9100NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps 40 18 ηD 30 VDD = 26 Vdc, Pout = 20 W (Avg.), IDQ = 950 mA N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) 16 14 IRL 12 ACPR 6 830 −30 −40 10 8 20 −50 ALT 840 −60 850 860 870 880 890 900 910 −70 920 −10 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) 20 ηD , DRAIN EFFICIENCY (%) 50 ACPR (dBc), ALT (dBc) G ps , POWER GAIN (dB) 22 f, FREQUENCY (MHz) 18 16 8 Gps 6 ηD VDD = 26 Vdc, Pout = 2 W (Avg.), IDQ = 950 mA N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) 14 IRL 12 10 −40 −50 ACPR −60 8 6 830 4 −70 ALT 840 850 860 870 880 890 900 910 −80 920 −10 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) 20 10 ACPR (dBc), ALT (dBc) 22 ηD , DRAIN EFFICIENCY (%) Figure 3. IS - 95 Broadband Performance @ Pout = 20 Watts Avg. f, FREQUENCY (MHz) Figure 4. IS - 95 Broadband Performance @ Pout = 2 Watts Avg. G ps , POWER GAIN (dB) 20 −20 IDQ = 1425 mA 1150 mA 950 mA 19 700 mA 18 17 16 0.1 475 mA VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements, 100 kHz Tone Spacing 1 10 100 1000 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 21 −25 −30 1425 mA −35 IDQ = 475 mA −40 −45 1150 mA −50 950 mA −55 700 mA −60 VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements, 100 kHz Tone Spacing −65 −70 0.1 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 RF Device Data Freescale Semiconductor 5 0 58 Ideal 57 Pout, OUTPUT POWER (dBm) −10 −20 3rd Order −30 5th Order −40 7th Order −50 P3dB = 51.58 dBm (143 W) 56 55 54 P1dB = 50.71 dBm (117 W) 53 52 Actual 51 50 −60 VDD = 26 Vdc, Pout = 96 W (PEP), IDQ = 950 mA Two−Tone Measurements, Center Frequency = 880 MHz −70 0.1 VDD = 26 Vdc, IDQ = 950 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 880 MHz 49 48 1 28 100 10 29 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power 50 −30 VDD = 26 Vdc, IDQ = 950 mA, f = 880 MHz N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) 45 40 −35 −40 35 −45 30 −50 ACPR 25 −55 Gps 20 −60 15 −65 10 −70 ηD 5 −75 ALT1 0 −80 1 100 10 38 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBm) TWO−TONE SPACING (MHz) ηD , DRAIN EFFICIENCY (%) G , POWER GAIN (dB) ps IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Single - Carrier N - CDMA ACPR, Power Gain, Efficiency and ALT1 versus Output Power 1010 IDQ = 950 mA f = 880 MHz G ps , POWER GAIN (dB) 19.5 19 18.5 20 V 24 V 18 32 V 16 V 17.5 MTTF FACTOR (HOURS x AMPS2) 20 109 108 VDD = 12 V 17 0 30 60 90 120 150 180 107 80 100 Figure 10. Power Gain versus Output Power 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) Pout, OUTPUT POWER (WATTS) CW This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 11. MTTF Factor versus Junction Temperature MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 6 RF Device Data Freescale Semiconductor f = 895 MHz Zload f = 865 MHz f = 865 MHz f = 895 MHz Zsource Zo = 5 Ω VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. Zload Ω f MHz Zsource Ω 865 3.0 - j1.8 1.4 - j0.7 880 2.8 - j1.9 1.5 - j0.6 895 2.7 - j1.7 1.5 - j0.5 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 RF Device Data Freescale Semiconductor 7 NOTES MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 8 RF Device Data Freescale Semiconductor NOTES MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X aaa b1 C A M 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF5S9100NR1(MR1) DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 10 RF Device Data Freescale Semiconductor E1 r1 aaa M C A B 2X A B GATE LEAD E2 DRAIN LEAD 3 D D2 D1 4X e 4 b1 aaa M C A 4X ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ H ZONE J A A1 A2 7 Y E3 1 2 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. F DATUM PLANE NOTE 8 E3 VIEW Y - Y E c1 PIN 5 Y C SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. CASE 1484 - 02 ISSUE B TO - 272 WB - 4 PLASTIC MRF5S9100NBR1(MBR1) DRAIN DRAIN GATE GATE SOURCE DIM A A1 A2 D D1 D2 E E1 E2 E3 F b1 c1 r1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .600 −−− .551 .559 .353 .357 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .063 .068 .106 BSC .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 15.24 −−− 14 14.2 8.97 9.07 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 .18 .28 1.60 1.73 2.69 BSC .10 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 Document Number: MRF5S9100 Rev. 3, 7/2005 12 RF Device Data Freescale Semiconductor