MOTOROLA MRF5S9070NR1

Freescale Semiconductor
Technical Data
MRF5S9070NR1
Rev. 3, 12/2004
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S9070NR1
MRF5S9070MR1
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts,
IDQ = 600 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13)
Power Gain — 17.8 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 47 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
880 MHz, 70 W, 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265- 08, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, + 68
Vdc
Gate - Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
219
1.25
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 70 W CW
Case Temperature 78°C, 14 W CW
RθJC
0.80
0.93
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114 - B)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115 - A)
A (Minimum)
Charge Device Model (per JESD22 - C101- A)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113D, IPC/JEDEC J - STD - 020C
Rating
Package Peak Temperature
Unit
3
260
°C
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9070NR1 MRF5S9070MR1
1
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µA)
VGS(th)
2
2.7
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
0.18
0.22
Vdc
gfs
—
4.7
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
126
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
34
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.37
—
pF
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
Dynamic Characteristic
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. Peak/Avg. Ratio =
9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
17
17.8
—
dB
Drain Efficiency
ηD
29
30
—
%
ACPR
—
- 47
- 45
dBc
IRL
—
- 19
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 26 Vdc,
IDQ = 400 mA, Pout = 60 W, f = 921 - 960 MHz
Power Gain
Gps
—
16.4
—
dB
Drain Efficiency
ηD
—
62
—
%
IRL
—
- 12
—
dB
P1dB
—
68
—
W
Input Return Loss
Pout @ 1 dB Compression Point
(f = 940 MHz)
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system)
VDD = 26 Vdc, IDQ = 400 mA, Pout = 25 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Gps
—
17
—
dB
Drain Efficiency
ηD
—
44
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
(continued)
MRF5S9070NR1 MRF5S9070MR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 865 - 895 MHz, 50 οhm system) VDD = 26 Vdc,
IDQ = 400 mA, Pout = 60 W, f = 865 - 895 MHz
Power Gain
Gps
—
16.4
—
dB
Drain Efficiency
ηD
—
59
—
%
Input Return Loss
IRL
—
- 15
—
dB
P1dB
—
71
—
W
Pout @ 1 dB Compression Point
(f = 880 MHz)
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 865 - 895 MHz, 50 οhm system)
VDD = 26 Vdc, IDQ = 400 mA, Pout = 25 W Avg., f = 865 - 895 MHz, GSM EDGE Signal
Power Gain
Drain Efficiency
Gps
—
17
—
dB
ηD
—
41
—
%
Error Vector Magnitude
EVM
—
1.35
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 66
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 81
—
dBc
MRF5S9070NR1 MRF5S9070MR1
RF Device Data
Freescale Semiconductor
3
VSUPPLY
B2
C18
+
C20
C19
+
C21
R4
L2
VBIAS
B1
R1
+
C7
+
C11
C8
C9
C22
C10
+
R2
L1
R3
C12
C5
RF
INPUT Z1
Z2
C1
Z3 Z4
C2
Z5 Z6
Z10
Z7
Z8
Z9
C3
C4
C6
Z11
Z12
C13
C14
Z13
Z14
C15
Z15
Z16
RF
OUTPUT
C16 C17
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.140″ x 0.060″ Microstrip
0.141″ x 0.060″ Microstrip
0.280″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.530″ x 0.270″ Microstrip
0.155″ x 0.270″ x 0.530″ Taper
0.376″ x 0.530″ Microstrip
0.116″ x 0.530″ Microstrip
0.055″ x 0.530″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.245″ x 0.270″ Microstrip
0.110″ x 0.270″ Microstrip
0.055″ x 0.270″ Microstrip
0.512″ x 0.060″ Microstrip
0.106″ x 0.060″ Microstrip
0.930″ x 0.060″ Microstrip
0.365″ x 0.060″ Microstrip
Taconic RF - 35, 0.030″, εr = 3.5
Figure 1. MRF5S9070NR1(MR1) Test Circuit Schematic
Table 6. MRF5S9070NR1(MR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Small Ferrite Bead, Surface Mount
2743019447
Fair - Rite
B2
Large Ferrite Bead, Surface Mount
2743021447
Fair - Rite
C1
0.6 - 6.0 pF Variable Capacitor, Gigatrim
272715L
Johanson
C2
16 pF Chip Capacitor
100B160JP500X
ATC
C3
7.5 pF Chip Capacitor
100B7R5JP500X
ATC
C4, C16
0.8 - 8.0 pF Variable Capacitor, Gigatrim
272915L
Johanson
C5, C6
15 pF Chip Capacitors
100B150JP500X
ATC
C7, C8, C20
10 µF, 35 V Tantalum Capacitors
T491D106K035AS
Kemet
C9, C19, C22
0.58 µF Chip Capacitors
700A561MP150X
ATC
C10, C18
18 pF Chip Capacitors
100B180JP500X
ATC
C11
100 µF, 50 V Electrolytic Capacitor
515D107M050BB6A
Vishay - Dale
C12
0.7 pF Chip Capacitor
100B0R7BP500X
ATC
C13, C14
13 pF Chip Capacitors
100B130JP500X
ATC
C15
3.9 pF Chip Capacitor
100B3R9JP500X
ATC
C17
22 pF Chip Capacitor
100B180JP500X
ATC
C21
470 µF, 63 V Electrolytic Capacitor
SME63VB471M12X25LL
United Chemi - Con
L1, L2
12.5 nH Surface Mount Inductors
A04T - 5
Coilcraft
R1
1 kW Chip Resistor
CRCW12061001F100
Vishay - Dale
R2
560 kW Chip Resistor
CRCW12065603F100
Vishay - Dale
R3
12 W Chip Resistor
CRCW120612R0F100
Vishay - Dale
R4
27 W Chip Resistor
CRCW120627R0F100
Vishay - Dale
MRF5S9070NR1 MRF5S9070MR1
4
RF Device Data
Freescale Semiconductor
C7 R1
VGG
C11
R2
R3
B2
C9
VDD
C20
R4
C22
C10
C18
C6
C2
C21
C19
C8
B1
L2
L1
C12
C17
C15
C3
C1
C5
C16
C4
CUT OUT AREA
C13 C14
MRF5S9070N
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S9070NR1(MR1) Test Circuit Component Layout
MRF5S9070NR1 MRF5S9070MR1
RF Device Data
Freescale Semiconductor
5
19
18
17
16
Gps
ηD
VDD = 26 Vdc, Pout = 14 W (Avg.), IDQ = 600 mA
Single −Carrier N−CDMA, IS−95
(Pilot, Sync, Paging, Traffic Codes 8 through 13)
15
14
13
12
ACPR
11
10
ALT
IRL
40
35
30
25
−40
−45
−50
−55
−60
9
8
860
865
870
875
880
885
890
−65
−70
900
895
−12
−15
−18
−21
−24
−27
−30
IRL, INPUT RETURN LOSS (dB)
45
ACPR (dBc), ALT (dBc)
G ps , POWER GAIN (dB)
20
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Performance
IDQ = 900 mA
750 mA
600 mA
18
450 mA
17
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
100 kHz Tone Spacing
300 mA
16
15
−30
−35
IDQ = 900 mA
300 mA
−40
750 mA
−45
600 mA
−50
−55
450 mA
−60
1
10
100
10
1
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
60
Gps
18
40
16
20
ηD
14
0
VDD = 26 Vdc, IDQ = 600 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements,
100 kHz Tone Spacing
12
10
−20
−40
IMD
8
−60
1
10
100
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
Pout, OUTPUT POWER (WATTS) PEP
20
G ps , POWER GAIN (dB)
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
100 kHz Tone Spacing
−25
IMD, INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB)
19
−20
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
20
−10
−20
−30
−40
−50
−60
−70
VDD = 26 Vdc, IDQ = 600 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two −Tone Measurements
Center Frequency = 880 MHz
100 kHz Tone Spacing
3rd Order
5th Order
7th Order
−80
−90
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Drain Efficiency and
IMD versus Output Power
Figure 7. Intermodulation Distortion Products
versus Output Power
MRF5S9070NR1 MRF5S9070MR1
6
RF Device Data
Freescale Semiconductor
55
20
54
Gps
18
53
G ps , POWER GAIN (dB)
P3dB = 49.78 dBm (94.97 W)
52
51
P1dB = 49.11 dBm (81.54 W)
50
49
Actual
48
46
20
ηD
14
0
VDD = 26 Vdc, IDQ = 600 mA, f = 880 MHz
−20
Single −Carrier N−CDMA, IS−95
(Pilot, Sync, Paging, Traffic Codes 8 through 13)
−40
12
10
ACPR
VDD = 26 Vdc, IDQ = 600 mA
Pulsed CW, 8 µsec (on), 1 msec (off)
Center Frequency = 880 MHz
47
16
40
8
−60
ALT
45
6
27
28
29
30
31
32
33
34
35
36
37
−80
1
10
Pin, INPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. N - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
20
70
Gps
18
60
16
50
14
40
12
30
10
VDD = 26 Vdc
IDQ = 600 mA
f = 880 MHz
ηD
ηD, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (dBm)
60
Ideal
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ηD, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
20
8
10
1
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF5S9070NR1 MRF5S9070MR1
RF Device Data
Freescale Semiconductor
7
Zo = 2 Ω
f = 895 MHz
f = 895 MHz
Zsource
f = 865 MHz
Zload
f = 865 MHz
VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
865
0.7 + j0.4
2.1 + j0.6
875
0.7 + j0.5
2.0 + j0.7
885
0.6 + j0.5
1.8 + j0.8
895
0.5 + j0.5
1.8 + j0.9
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
MRF5S9070NR1 MRF5S9070MR1
8
RF Device Data
Freescale Semiconductor
NOTES
MRF5S9070NR1 MRF5S9070MR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF5S9070NR1 MRF5S9070MR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
E1
B
2X
D3
2X
E4
aaa
D
aaa
M
M
D A
2X
D1
b1
D A
PIN ONE ID
E
A
E5
E3
PIN 2
D2
PIN 3
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
EXPOSED
HEATSINK AREA
PIN 1
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
aaa
BOTTOM VIEW
F
c1 H
DATUM
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
ZONE J
A
A1
INCHES
MIN
MAX
.078
.082
.039
.043
.040
.042
.416
.424
.378
.382
.290
.320
.016
.024
.436
.444
.238
.242
.066
.074
.150
.180
.058
.066
.231
.235
.025 BSC
.193
.199
.007
.011
.004
MILLIMETERS
MIN
MAX
1.98
2.08
0.99
1.09
1.02
1.07
10.57
10.77
9.60
9.70
7.37
8.13
0.41
0.61
11.07
11.28
6.04
6.15
1.68
1.88
3.81
4.57
1.47
1.68
5.87
5.97
0.64 BSC
4.90
5.06
0.18
0.28
0.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
2X
A2
NOTE 7
E2
E5
D
CASE 1265 - 08
ISSUE G
TO - 270- 2
PLASTIC
MRF5S9070NR1 MRF5S9070MR1
RF Device Data
Freescale Semiconductor
11
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 Freescale Semiconductor, Inc. 2004. All rights reserved.
MRF5S9070NR1 MRF5S9070MR1
MRF5S9070NR1
Rev. 3, 12/2004
12
RF Device Data
Freescale Semiconductor