Freescale Semiconductor Technical Data Document Number: MRF5S4125N Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4125NR1 MRF5S4125NBR1 Designed for broadband commercial and industrial applications with frequencies up to 500 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 465 MHz: VDD = 28 Volts, IDQ = 1100 mA, Pout = 25 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 23 dB Drain Efficiency — 30.2% ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 450 - 480 MHz, 25 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 MRF5S4125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 MRF5S4125NBR1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Tstg - 65 to +150 °C TJ 200 °C Symbol Value (2,3) Unit Storage Temperature Range Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 90°C, 125 W CW Case Temperature 90°C, 25 W CW RθJC 0.33 0.43 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRF5S4125NR1 MRF5S4125NBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) VGS(Q) 3.5 4.25 5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) 0.05 0.175 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.41 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 74.61 — pF Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 25 W Avg. N - CDMA, f = 465 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 22 23 25 dB Drain Efficiency ηD 28 30.2 — % ACPR — - 47.6 - 45 dBc IRL — - 15 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. MRF5S4125NR1 MRF5S4125NBR1 2 RF Device Data Freescale Semiconductor B1 R1 VBIAS VSUPPLY + R2 C5 C6 C14 C13 B2 C15 C16 Z19 L3 RF INPUT R3 Z1 L1 Z2 Z6 Z7 L2 Z8 Z10 Z3 Z4 Z13 C7 C9 C4 Z15 0.186″ 0.206″ 1.171″ 0.275″ 0.985″ 0.130″ 0.131″ 0.675″ 0.397″ 0.071″ 0.008″ x 0.084″ x 0.084″ x 0.084″ x 0.084″ x 0.084″ x 0.084″ x 0.084″ x 0.504″ x 0.656″ x 0.084″ x 0.084″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z20 C11 C8 Z5 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Z11 Z12 Z18 Z14 DUT C3 Z12 Z9 C1 C2 Z11 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 PCB Z21 C12 C10 Z16 Z22 RF OUTPUT Z17 0.063″ x 0.084″ Microstrip 0.315″ x 0.084″ Microstrip 0.473″ x 0.084″ Microstrip 0.522″ x 0.084″ Microstrip 0.448″ x 0.084″ Microstrip 0.628″ x 0.084″ Microstrip 0.291″ x 0.084″ Microstrip 0.318″ x 0.084″ Microstrip 0.202″ x 0.084″ Microstrip 0.190″ x 0.084″ Microstrip Arlon AD250, 0.030″, εr = 2.5 Figure 1. MRF5S4125NR1(NBR1) Test Circuit Schematic Table 6. MRF5S4125NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair - Rite C1, C6, C12, C13 120 pF Chip Capacitors ATC600B121BT250XT ATC C2, C10 0.8 - 8.0 pF, Variable Capacitors, Gigatrim 27291SL Johanson C3, C9 20 pF Chip Capacitors ATC600B200BT250XT ATC C4 8.2 pF Chip Capacitor ATC600B8R2BT250XT ATC C5, C14, C15 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C7 27 pF Chip Capacitor ATC600B270BT250XT ATC C8 47 pF Chip Capacitor ATC600B470BT250XT ATC C11 3.3 pF Chip Capacitor ATC600B3R3BT250XT ATC C16 22 μF, 35 V Tantalum Capacitor T491X226K035A5 Kemet L1, L2 1.6 nH Inductors 0906 - 2 Coilcraft L3 27 nH Inductor 1812SMS - 27N_L Coilcraft R1 1000 Ω, 1/4 W Chip Resistor CRCW12061001FKTA Vishay R2 10 kΩ, 1/4 W Chip Resistor CRCW12061002FKTA Vishay R3 100 Ω, 1/4 W Chip Resistor CRCW1206100RFKTA Vishay MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 3 C14 C6 B1 R1 C15 C16 B2 R2 C13 R3 L1 C1 C2 L2 C3 C4 CUT OUT AREA C5 L3 C8 C12 C7 C9 C11 C10 MRF5S4125N Rev. 1 Figure 2. MRF5S4125NR1(NBR1) Test Circuit Component Layout MRF5S4125NR1 MRF5S4125NBR1 4 RF Device Data Freescale Semiconductor 24 32 ηD 23 22 Gps 21 28 24 VDD = 28 Vdc, Pout = 25 W (Avg.) IDQ = 1100 mA, Single−Carrier N−CDMA −45 ACPR 20 −50 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 19 −55 IRL 18 −60 ALT1 17 420 430 440 450 460 470 480 490 −65 500 0 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) 36 ηD, DRAIN EFFICIENCY (%) 25 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 24 48 44 23 ηD 40 22 21 VDD = 28 Vdc, Pout = 58 W (Avg.) IDQ = 1100 mA, Single−Carrier N−CDMA 1.2288 MHz, Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) Gps 20 19 ACPR −50 ALT1 17 420 430 −30 −40 IRL 18 −20 440 450 460 470 480 490 −60 500 0 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) 52 ηD, DRAIN EFFICIENCY (%) 25 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 25 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 58 Watts Avg. −10 IDQ = 1650 mA Gps, POWER GAIN (dB) 24 1375 mA 1100 mA 23 825 mA 22 21 550 mA 20 VDD = 28 Vdc f1 = 465 MHz, f2 = 467.5 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing 19 18 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 25 VDD = 28 Vdc f1 = 465 MHz, f2 = 467.5 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing −20 IDQ = 550 mA −30 562.5 mA 825 mA −40 1375 mA 1100 mA −50 1 10 100 200 300 1 10 100 200 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 5 −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc f1 = 465 MHz, f2 = 467.5 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing −20 −30 3rd Order −40 5th Order −50 7th Order −60 −70 1 10 100 −10 VDD = 28 Vdc, Pout = 120 W (PEP) IDQ = 1100 mA, Two −Tone Measurements −20 (f1 + f2)/2 = Center Frequency of 465 MHz IM3 −U −30 IM3 −L IM5 −L IM5 −U −40 IM7 −U −50 IM7 −L −60 200 300 1 100 10 Pout, OUTPUT POWER (WATTS) PEP TWO −TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 59 Ideal Pout, OUTPUT POWER (dBm) 58 P6dB = 52.98 dBm (198.6 W) 57 56 P3dB = 52.26 dBm (168.27 W) 55 54 P1dB = 51.16 dBm (130.62 W) 53 Actual 52 51 VDD = 28 Vdc, IDQ = 1100 mA CW f = 465 MHz 50 49 24 25 26 27 28 29 30 31 32 33 34 35 36 Pin, INPUT POWER (dBm) 50 −25 VDD = 28 Vdc, IDQ = 1100 mA, f = 465 MHz Single −Carrier N−CDMA 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 45 40 35 30 85_C 25_C −30_C 15 −35 −40 −45 ACPR 25_C Gps TC = −30_C 25 20 −30 −50 −55 ηD 85_C −60 ALT1 10 5 85_C 0 1 25_C ACPR (dBc), ALT1 (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power −65 −30_C −70 −75 10 60 Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF5S4125NR1 MRF5S4125NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS TC = −30_C −30_C 24 70 23 25_C 85_C 60 22 85_C 50 21 40 20 30 19 ηD 18 20 VDD = 28 Vdc IDQ = 1100 mA f = 465 MHz 17 10 1 100 IDQ = 1100 mA f = 465 MHz 80 Gps, POWER GAIN (dB) 25_C ηD, DRAIN EFFICIENCY (%) Gps 25 Gps, POWER GAIN (dB) 24 90 26 23 22 21 10 VDD = 24 V 20 0 300 0 50 100 32 V 28 V 150 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 250 109 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 25 W Avg., and ηD = 30.2%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 7 N - CDMA TEST SIGNAL 100 −10 1.2288 MHz Channel BW −20 10 1 −40 −50 0.1 (dB) PROBABILITY (%) −30 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −ACPR in 30 kHz Integrated BW −90 0.0001 0 2 4 6 8 10 −ACPR in 30 kHz Integrated BW −100 PEAK −TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF5S4125NR1 MRF5S4125NBR1 8 RF Device Data Freescale Semiconductor f = 545 MHz Zload f = 545 MHz Zsource f = 385 MHz Zo = 25 Ω f = 385 MHz VDD = 28 Vdc, IDQ = 1100 mA, Pout = 25 W Avg. f MHz Zsource W Zload W 385 4.735 + j2.917 2.229 + j5.627 405 4.073 + j4.202 1.809 + j6.123 425 3.987 + j5.466 1.842 + j6.684 445 3.909 + j6.743 1.767 + j7.187 465 4.094 + j7.661 1.822 + j7.338 485 4.128 + j9.483 1.566 + j8.397 505 4.446 + j11.620 1.525 + j9.787 525 4.921 + j13.710 1.769 + j11.120 545 5.437 + j15.838 2.023 + j12.467 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X b1 aaa M C A 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF5S4125NR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF5S4125NR1 MRF5S4125NBR1 10 RF Device Data Freescale Semiconductor MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 11 MRF5S4125NR1 MRF5S4125NBR1 12 RF Device Data Freescale Semiconductor MRF5S4125NR1 MRF5S4125NBR1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Jan. 2007 Description • Initial Release of Data Sheet MRF5S4125NR1 MRF5S4125NBR1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF5S4125NR1 MRF5S4125NBR1 Document Number: RF Device Data MRF5S4125N Rev. 0, 1/2007 Freescale Semiconductor 15