PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 4 G G 1 3 G G 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage VDD 10 V Supply current I DD 3 A VAPC voltage VAPC 4 V Input power Pin 50 mW Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –30 to +100 °C Output power Pout 4 W PF01410A Electrical Characteristics (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Frequency range f 890 — 915 MHz — Control voltage range VAPC 0.1 — 2.5 V — Drain cutoff current I DS — — 100 µA VDD = 10 V, VAPC = 0 V Total efficiency ηT 38 45 — % Pin = +8 dBm, V DD = 4.8 V, 2nd harmonic distortion 2nd H.D. — –45 –35 dBc Pout = 2.8 W (At APC controlled) 3rd harmonic distortion 3rd H.D. — –45 –35 dBc RL = Rg = 50Ω, Tc = 25°C Input VSWR VSWR (in) — 1.5 3.0 — Output power (1) Pout (1) 2.8 3.3 — W Pin = +8 dBm, V DD = 4.8 V, VAPC = 2.5 V, RL = Rg = 50Ω, Tc = 25°C Output power (2) Pout (2) 1.5 1.8 — W Pin = +8 dBm, V DD = 4 V, VAPC = 2.5 V, RL = Rg = 50Ω, Tc = 85°C Isolation — — –35 –20 dBm Pin = +12.5 dBm, VDD = 4.8 V, VAPC = 0.1 V, RL = Rg = 50Ω, Tc = 25°C Switching time t r, t f — 1 2 µs Pin = +8 dBm, V DD = 4.8 V, RL = Rg = 50Ω, Tc = 25°C Time from Pout = –10 to +34.5 dBm Stability — No parasitic oscillation — Pin = +8 dBm, V DD = 7 V, Pout ≤ 2.8 W (At APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 8 : 1 All phases 2 PF01410A Package Dimensions Unit: mm 3 1 G 2 1.8 ± 0.2 8.0 ± 0.3 G 8.0 ± 0.3 7.8 ± 0.3 4 (Upper side) 4 12.3 ± 0.3 3 G 1 G 2 9.6 ± 0.2 G G 2 4 G G 3 3.7 2.1 0.6 3.7 2.1 1 1.8 1.3 1.8 1.6 1.8 1.3 1.8 (Bottom side) Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. 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