FAN7171_F085 High-Current High-Side Gate Drive IC Features Description Floating Channel for Bootstrap Operation to +600V The FAN7171_F085 is a monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. 4A/4A Sourcing/Sinking Current Driving Capability Common-Mode dv/dt Noise Canceling Circuit 3.3V and 5V Input Logic Compatible Output In-phase with Input Signal Under- Voltage Lockout for VBS 25V Shunt Regulator on VDD and VBS 8-Lead Small Outline Package (SOP) Qualified to AEC Q100 Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage. Applications High-Speed Gate Driver High-Power Buck Converter Motor Drive Inverter The high-current and low-output voltage drop feature makes this device suitable for sustaine switch driver and energy recovery switch driver in the Plasma Display Panel application, motor drive inverter, switching power supply, and high-power DC-DC converter applications. 8-SOP Ordering Information Part Number FAN7171M(1) FAN7171MX(1) Package Operating Temperature Range 8-SOP -40°C ~ 125°C Eco Status RoHS Packing Method Tube Tape & Reel Note: 1. These devices passed wave soldering test by JESD22A-111. For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 www.fairchildsemi.com FAN7171_F085 — High-Current High-Side Gate Drive IC October 2011 FAN7171_F085 — High-Current High-Side Gate Drive IC Typical Application Diagrams VIN 15V RBOOT DBOOT FAN7171_F805 PWM 1 VDD VB 8 2 IN HO 7 3 NC VS 6 R1 CBOOT C1 4 GND L1 R2 NC 5 C2 D1 VOUT Figure 1. Application Circuit for Step-Down (Buck) DC-DC Converter 1 VDD 25V GND 2 110K PULSE GENERATOR IN UVLO 4 NOISE CANCELLER R S R Q Shoot-through current compensated gate driver VDD 8 VB 7 HO 6 VS 25V Pins 3 and 5 are no connection. Figure 2. Functional Block Diagram © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 www.fairchildsemi.com 2 FAN7171_F085 — High-Current High-Side Gate Drive IC Pin Configuration VDD 1 IN 2 NC 3 FAN7171 FAN7371 _F085 GND 4 8 VB 7 HO 6 VS 5 NC Figure 3. Pin Assignments(Top View) Pin Definitions Pin # Name 1 VDD Description Supply Voltage 2 IN Logic Input for High-Side Gate Driver Output 3 NC No Connection 4 GND 5 NC Ground No Connection 6 VS High-Voltage Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 www.fairchildsemi.com 3 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. -40°C<=TA <=125°C unless otherwise specified. Symbol Characteristics VS High-Side Floating Offset Voltage VB High-Side Floating Supply Voltage(2) VHO VDD High-Side Floating Output Voltage Low-Side and Logic Supply Voltage (2) Max. Unit VB-VSHUNT VB+0.3 V -0.3 625.0 V VS-0.3 VB+0.3 V -0.3 VSHUNT V -0.3 VDD+0.3 V Allowable Offset Voltage Slew Rate ± 50 V/ns PD Power Dissipation(3, 4, 5) 0.625 W JA Thermal Resistance 200 C/W TJ Junction Temperature -55 150 C TSTG Storage Temperature -55 150 C Operating Ambient Temperature -40 125 C VIN dVS/dt TA Logic Input Voltage Min. VESD Human Body Model(HBM) 1500 V VCDM Charge Device Model 500 V Notes: 1) This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the Electrical Characteristics section 2) Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). 3) Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages. 4 Do not exceed power dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit VBS High-Side Floating Supply Voltage VS+10 VS+20 V VS High-Side Floating Supply Offset Voltage(DC) 6-VDD 600 V VS High-Side Floating Supply Offset Voltage(Transient) -15(~170) -7(~400) 600 VHO High-Side Output Voltage VIN Logic Input Voltage VDD Supply Voltage © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 V VS VB V GND VDD V 10 20 V www.fairchildsemi.com 4 FAN7171_F085 — High-Current High-Side Gate Drive IC Absolute Maximum Ratings VBIAS(VDD, VBS)=15.0V, -40°C<=TA <= 125°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Characteristics POWER SUPPLY SECTION IQDD Quiescent VDD Supply Current IPDD Operating VDD Supply Current Test Condition Min. Typ. Max. Unit VIN=0V or 5V 25 70 A fIN=20KHz, No Load 35 100 A BOOTSTRAPPED SUPPLY SECTION VBS Supply Under-Voltage Positive Going Threshold Voltage VBS Supply Under-Voltage Negative Going VBSUVThreshold Voltage VBS Supply Under-Voltage Lockout VBSHYS Hysteresis Voltage ILK Offset Supply Leakage Current VBSUV+ IQBS IPBS VBS=Sweep 8.2 9.2 10.2 V VBS=Sweep 7.5 8.5 9.5 V VBS=Sweep VIN=0V or 5V Operating VBS Supply Current CLOAD=1nF, fIN=20KHz, rms value ISHUNT=5mA A 60 120 A 0.73 2.8 mA 23 25 V 2.5 VIL Logic “0” Input Voltage IIN+ Logic Input High Bias Current VIN=5V IIN- Logic Input Low Bias Current VIN=0V RIN Input Pull-down Resistance GATE DRIVER OUTPUT SECTION(HO) VOH High Level Output Voltage (VBIAS - VO) V 50 VB=VS=600V Quiescent VBS Supply Current SHUNT REGULATOR SECTION V and VBS Shunt Regulator Clamping VSHUNT DD Voltage INPUT LOGIC SECTION(IN) VIH Logic “1” Input Voltage 0.6 V 45 40 0.8 V 125 A 2 A 110 No Load K 1.5 V 35 mV VOL Low Level Output Voltage No Load IO+ Output High, Short-Circuit Pulsed Current(5) VHO=0V, VIN=5V, PW 10µs 3.0 4.0 A IO- Output Low, Short-Circuit Pulsed Current(5) VHO=15V,VIN=0V, PW 10µs Allowable Negative VS pin Voltage for IN Signal Propagation to HO 3.0 4.0 A VS -9.8 -7.0 V Note: 5 These parameters guaranteed by design. Dynamic Electrical Characteristics VBIAS(VDD,VBS)=15V, VS=GND=0V, CL=1000pF, and-40°C<= TA <=125°C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit ton Turn-on Propagation Delay Time VS=0V 150 210 ns toff Turn-off Propagation Delay Time VS=0V 150 210 ns tr Turn-on Rise Time 25 50 ns tf Turn-off Fall Time 15 45 ns . © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 www.fairchildsemi.com 5 FAN7171_F085 — High-Current High-Side Gate Drive IC Electrical Characteristics 250 200 200 tOFF [ns] tON [ns] 250 150 100 50 150 100 50 0 -40 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] 50 50 40 40 30 30 20 20 10 10 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] 80 100 120 20 40 60 80 100 120 Figure 7. Turn-off Fall Time vs. Temperature 100 2.0 80 1.5 IPBS [mA] IPDD [A] 60 Temperature [°C] Figure 6. Turn-on Rise Time vs. Temperature 60 40 1.0 0.5 20 0 -40 40 Figure 5. Turn-off Propagation Delay vs. Temperature tF [ns] tR [ns] Figure 4. Turn-on Propagation Delay vs. Temperature 0 -40 20 Temperature [°C] -20 0 20 40 60 80 100 0.0 -40 120 Temperature [°C] -20 0 20 40 60 80 100 120 Temperature [°C] Figure 8. Operating VDD Supply Current Figure 9. Operating VBS Supply Current vs. Temperature vs. Temperature © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 www.fairchildsemi.com 6 FAN7171_F085 — High-Current High-Side Gate Drive IC Typical Characteristics 9.5 9.5 9.0 VBSUV- [V] VBSUV+ [V] 10.0 9.0 8.0 8.5 8.0 -40 8.5 -20 0 20 40 60 80 100 7.5 -40 120 -20 0 Temperature [°C] 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.0 0.5 0.5 0 20 40 60 60 80 100 120 1.5 1.0 -20 40 Figure 11. VBS UVLO- vs. Temperature VIL [V] VIH [V] Figure 10. VBS UVLO+ vs. Temperature 0.0 -40 20 Temperature [°C] 80 100 0.0 -40 120 -20 0 Temperature [°C] 20 40 60 80 100 120 Temperature [°C] Figure 12. Logic High Input Voltage vs. Temperature Figure 13. Logic Low Input Voltage vs. Temperature 280 1.50 240 1.25 VOH [V] RIN [k] 200 160 120 1.00 0.75 80 0.50 40 0.25 0 -40 -20 0 20 40 60 80 100 0.00 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 14. Input Pull-down Resistance vs.Temperature. Figure 15. High-Level Output Voltage vs. Temperature © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 -20 www.fairchildsemi.com 7 FAN7171_F085 — High-Current High-Side Gate Drive IC Typical Characteristics (Continued) 6.5 6.0 6.0 5.5 5.5 5.0 5.0 IO- [A] IO+ [A] 6.5 4.5 4.5 4.0 4.0 3.5 3.5 3.0 3.0 2.5 -40 -20 0 20 40 60 80 100 2.5 -40 120 -20 0 Temperature [°C] 7 7 6 6 5 5 4 4 3 3 12 14 16 40 60 80 100 120 Figure 17. Output Low, Short-Circuit Pulsed Current vs. Temperature IO- [A] IO+ [A] Figure 16. Output High, Short-Circuit Pulsed Current vs. Temperature 2 10 20 Temperature [°C] 18 2 10 20 12 14 VBS [V] 16 18 20 VBS [V] Figure 18. Output High, Short-Circuit Pulsed Current vs. Supply Voltage Figure 19. Output Low, Short-Circuit Pulsed Current vs. Supply Voltage 80 120 100 40 25°C 25°C 60 125°C 40 125°C 20 -40°C 80 -40°C IQBS [A] IQDD [A] 60 20 0 10 12 14 16 18 0 10 20 Supply Voltage [V] 14 16 18 20 Supply Voltage [V] Figure 20. Quiescent VDD Supply Current vs. Supply Voltage Figure 21. Quiescent VBS Supply Current vs. Supply Voltage © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 12 www.fairchildsemi.com 8 FAN7171_F085 — High-Current High-Side Gate Drive IC Typical Characteristics (Continued) FAN7171_F085 — High-Current High-Side Gate Drive IC Switching Time Definitions 15V VDD 10nF VB 10µF 10µF 15V 0.1µF VS GND FAN7171_F085 1000pF HO IN Figure 22. Switching Time Test Circuit (Referenced 8-SOP) 50% 50% IN ton tr t o ff 90% 90% HO - VS tf 10% 10% Figure 23. Switching Time Waveform Definitions © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 www.fairchildsemi.com 9 5.00 4.80 A 0.65 3.81 8 5 B 6.20 5.80 PIN ONE INDICATOR 1.75 4.00 3.80 1 5.60 4 1.27 (0.33) 0.25 M 1.27 C B A LAND PATTERN RECOMMENDATION 0.25 0.10 SEE DETAIL A 1.75 MAX 0.25 0.19 C 0.10 0.51 0.33 0.50 x 45ٛ 0.25 R0.10 C OPTION A - BEVEL EDGE GAGE PLANE R0.10 OPTION B - NO BEVEL EDGE 0.36 NOTES: UNLESS OTHERWISE SPECIFIED 8ٛ 0ٛ 0.90 0.406 A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AA, ISSUE C, B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) LANDPATTERN STANDARD: SOIC127P600X175-8M. E) DRAWING FILENAME: M08AREV13 SEATING PLANE (1.04) DETAIL A SCALE: 2:1 Figure 24. 8-Lead Small Outline Package (SOP) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 www.fairchildsemi.com 10 FAN7171_F085 — High-Current High-Side Gate Drive IC Physical Dimensions FAN7171_F085 — High-Current High-Side Gate Drive IC © 2011 Fairchild Semiconductor Corporation FAN7171_F085 Rev. 1.0.0 www.fairchildsemi.com 11