FAIRCHILD FDP6N60ZU

UniFETTM
FDP6N60ZU / FDPF6N60ZUT
N-Channel MOSFET, FRFET
600V, 4.5A, 2Ω
Features
Description
• RDS(on) = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( Typ. 14.5nC)
• Low Crss ( Typ. 5pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
D
G
G DS
TO-220
FDP Series
TO-220F
FDPF Series
GD S
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted*
o
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FDP6N60ZU
FDPF6N60ZUT
600
Units
V
±30
V
-Continuous (TC = 25oC)
4.5
4.5*
-Continuous (TC = 100oC)
2.7
2.7*
- Pulsed
(Note 1)
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
4.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
10.5
mJ
dv/dt
Peak Diode Recovery dv/dt
18*
(Note 2)
A
150
(Note 3)
mJ
20
V/ns
(TC = 25oC)
105
33.8
W
- Derate above 25oC
0.85
0.27
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
18
A
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP6N60ZU
FDPF6N60ZUT
RθJC
Thermal Resistance, Junction to Case
1.2
3.7
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2009 Fairchild Semiconductor Corporation
FDP6N60ZU / FDPF6N60ZUT Rev. A
1
Units
o
C/W
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
April 2009
Device Marking
FDP6N60ZU
Device
FDP6N60ZU
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF6N60ZUT
FDPF6N60ZUT
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V, TJ = 25oC
600
-
-
V
ID = 250μA, Referenced to 25oC
-
0.75
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
-
-
25
VDS = 480V, TC = 125oC
-
-
250
μA
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±10
μA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 2.25A
-
1.7
2.0
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 2.25A
-
3.5
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
650
865
pF
-
75
100
pF
-
5
10
pF
-
14.5
20
nC
-
4
-
nC
-
6
-
nC
-
19
48
ns
-
25
60
ns
-
25
60
ns
-
45
100
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 480V, ID = 4.5A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 300V, ID = 4.5A
RG = 25Ω, VGS = 10V
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
4.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
18
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4.5A
-
-
1.6
V
trr
Reverse Recovery Time
-
36
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 4.5A
dIF/dt = 100A/μs
-
37
-
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 15mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
FDP6N60ZU / FDPF6N60ZUT Rev. A
2
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
20
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
10
ID,Drain Current[A]
ID,Drain Current[A]
10
1
o
150 C
1
o
25 C
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
0.1
0.1
0.1
1
10
VDS,Drain-Source Voltage[V]
2
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
6
VGS,Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
2.7
IS, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
100
2.4
2.1
VGS = 10V
VGS = 20V
1.8
o
150 C
10
o
25 C
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
1.5
0
3
6
ID, Drain Current [A]
9
0
Figure 5. Capacitance Characteristics
3
Figure 6. Gate Charge Characteristics
Coss
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
1
2
VSD, Body Diode Forward Voltage [V]
10
1500
1000
2. 250μs Pulse Test
1
12
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
500
VDS = 150V
VDS = 300V
VDS = 480V
8
6
4
2
Crss
*Note: ID = 4.5A
0
0.1
0
1
10
VDS, Drain-Source Voltage [V]
FDP6N60ZU / FDPF6N60ZUT Rev. A
0
30
3
5
10
Qg, Total Gate Charge [nC]
15
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Typical Performance Characteristics
Figure 8. Maximum Safe Operating Area
- FDPF6N60ZUT
1.16
30
1.12
10
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.08
1.04
1.00
0.96
20μs
100μs
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
1. TC = 25 C
*Notes:
1. VGS = 0V
2. ID = 250μA
0.92
0.88
-100
o
2. TJ = 150 C
3. Single Pulse
0.01
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
DC
1
200
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current
vs. Case Temperature
ID, Drain Current [A]
6
4
Limited by package
2
0
25
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDPF6N60ZUT
Thermal Response [ZθJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
*Notes:
0.01
o
Single pulse
0.01
-5
10
FDP6N60ZU / FDPF6N60ZUT Rev. A
t2
1. ZθJC(t) = 3.7 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
4
10
2
10
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FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP6N60ZU / FDPF6N60ZUT Rev. A
5
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FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDP6N60ZU / FDPF6N60ZUT Rev. A
6
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
(45°
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
FDP6N60ZU / FDPF6N60ZUT Rev. A
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
7
2.40 ±0.20
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Mechanical Dimensions
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
0°
(3
9.75 ±0.30
MAX1.47
)
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP6N60ZU / FDPF6N60ZUT Rev. A
8
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
FDP6N60ZU / FDPF6N60ZUT Rev. A
9
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
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