QFET FQD16N25C 250V N-Channel MOSFET tm Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. 16A, 250V, RDS(on) = 0.27Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 68 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant D D G G D-PAK S FQD Series S Absolute Maximum Ratings Symbol Parameter FQD16N25C Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 16 A 10.1 A IDM Drain Current - Pulsed 64 A - Continuous (TC = 100°C) (Note 1) ± 30 V 432 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 160 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25°C 5.5 V/ns 160 W 1.28 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter FQD16N25C Units RθJC Thermal Resistance, Junction-to-Case 0.78 °C/W RθJA Thermal Resistance, Junction-to-Ambient 110 °C/W ©2012 Fairchild Semiconductor Corporation FQD16N25C Rev. C0 1 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET September 2012 ® Device Marking Device FQD16N25C FQD16N25CTM D-PAK 380mm 16mm 2,500 FQD16N25C FQD16N25CTF D-PAK 380mm 16mm 2,000 Electrical Characteristics Symbol Package Reel Size Tape Width Quantity TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS/ ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.31 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 μA VDS = 200 V, TC = 125°C -- -- 100 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.22 0.27 Ω -- 10.5 -- S -- 830 1080 pF -- 170 220 pF -- 68 89 pF -- 15 40 ns -- 130 270 ns -- 135 280 ns -- 105 220 ns -- 41 53.5 nC -- 5.6 -- nC -- 22.7 -- nC -- -- 16 A On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 8A gFS Forward Transconductance VDS = 40 V, ID =8 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 125 V, ID = 16A, RG = 25 Ω (Note 4, 5) VDS = 200 V, ID = 16A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 64 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 16 A -- -- 1.5 V trr Reverse Recovery Time 260 -- ns Reverse Recovery Charge VGS = 0 V, IS = 16 A, dIF / dt = 100 A/μs -- Qrr -- 2.47 -- μC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.7mH, IAS = 16A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQD16N25C Rev. C0 2 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 ID, Drain Current [A] 1 10 0 10 10 o 150 C o 25 C o -55 C 0 10 ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ ∝ Notes : 1. VDS = 40V 2. 250レs Pulse Test -1 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [ヘ ], Drain-Source On-Resistance 1.5 1.0 VGS = 10V 0.5 VGS = 20V ∝ Note : TJ = 25∩ 0.0 1 10 0 10 150∩ ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test -1 0 10 20 30 40 10 50 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 3000 VGS, Gate-Source Voltage [V] Capacitance [pF] Ciss Coss Crss 1000 0 -1 10 ∝ Notes : 1. VGS = 0 V 2. f = 1 MHz 1.4 1.6 1.8 VDS = 50V 10 VDS = 125V VDS = 200V 8 6 4 2 ∝ Note : ID = 15.6A 0 10 0 1 10 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQD16N25C Rev. C0 1.2 12 2000 1500 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] 500 25∩ 3 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∝ Notes : 1. VGS = 0 V 2. ID = 250 レA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ∝ Notes : 1. VGS = 10 V 2. ID = 8.9 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 Operation in This Area is Limited by R DS(on) 2 15 10 μs ID, Drain Current [A] ID, Drain Current [A] 10 100 μs 1ms 1 10 10ms 100ms DC 0 10 10 5 * Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 -1 10 10 0 1 10 10 25 2 50 75 100 125 150 o TC, Case Temperature [ C] VDS, Drain-SourceVoltage[V] Figure 11. Transient Thermal Response Curve 0 10 Z? JC(t), Thermal Response D=0.5 0.2 -1 10 0.1 0.05 PDM 0.02 0.01 t1 -2 10 single pulse -5 10 -4 10 -3 10 t2 * Notes : 0 1. Z? JC(t) = 0.78 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC(t) -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] FQD16N25C Rev. C0 4 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Typical Performance Characteristics (Continued) FQD16N25C 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQD16N25C Rev. C0 5 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQD16N25C Rev. C0 6 www.fairchildsemi.com FQD16N25C 250V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FQD16N25C Rev. C0 7 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FQD16N25C Rev. 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