UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS(on) = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 65nC) • Low Crss ( Typ. 32pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant D G G DS TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 24 -Continuous (TC = 100oC) - Pulsed Ratings 500 A 14 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 24 A EAR Repetitive Avalanche Energy (Note 1) 27 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns 96 A (Note 2) 1872 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 270 W 2.2 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.46 RθCS Thermal Resistance, Case to Sink Typ. 0.24 RθJA Thermal Resistance, Junction to Ambient ©2012 Fairchild Semiconductor Corporation FDA24N50F Rev.C0 Units o C/W 40 1 www.fairchildsemi.com FDA24N50F N-Channel MOSFET February 2012 Device Marking FDA24N50F Device FDA24N50F Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ID = 250μA, Referenced to 25oC - 0.6 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 500V, VGS = 0V - - 1 VDS = 400V, TC = 125oC - - 10 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.166 0.2 Ω - 30 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 12A gFS Forward Transconductance VDS = 20V, ID = 12A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 24A VGS = 10V (Note 4, 5) - 3240 4310 pF - 450 600 pF - 32 48 pF - 65 85 nC - 18 - nC - 26 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 24A RG = 25Ω (Note 4, 5) - 49 108 ns - 105 220 ns - 165 340 ns - 87 185 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 24 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 96 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 24A - - 1.4 V trr Reverse Recovery Time - 264 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 24A dIF/dt = 100A/μs - 1.4 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.5mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA24N50F Rev.C0 2 www.fairchildsemi.com FDA24N50F N-Channel MOSFET Package Marking and Ordering Information FDA24N50F N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 Figure 2. Transfer Characteristics 100 ID,Drain Current[A] ID,Drain Current[A] 60 o 150 C o -55 C 10 o 25 C *Notes: 1. 250μs Pulse Test 1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.5 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] 0.25 VGS = 10V VGS = 20V 0.20 o 150 C o 10 *Note: TJ = 25 C 0 20 40 60 ID, Drain Current [A] 1 0.2 80 Figure 5. Capacitance Characteristics 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz 4500 Ciss 3000 Coss 1500 FDA24N50F Rev.C0 1.4 Figure 6. Gate Charge Characteristics VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 2. 250μs Pulse Test 0.6 1.0 VSD, Body Diode Forward Voltage [V] 10 VGS, Gate-Source Voltage [V] 7500 25 C *Notes: 1. VGS = 0V o Capacitances [pF] 8 150 100 0.30 0.15 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.35 RDS(ON) [Ω], Drain-Source On-Resistance 4 0 1 10 VDS, Drain-Source Voltage [V] 30 3 *Note: ID = 24A 0 20 40 Qg, Total Gate Charge [nC] 60 70 www.fairchildsemi.com FDA24N50F N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 12A 0.5 0.0 -75 175 Figure 9. Maximum Safe Operating Area -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Drain Current vs. Case Temperature 24 200 100 60μs 10 ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 10ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 18 12 6 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 o 0.01 1. ZθJC(t) = 0.46 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 FDA24N50F Rev.C0 t2 *Notes: -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDA24N50F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA24N50F Rev.C0 5 www.fairchildsemi.com FDA24N50F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDA24N50F Rev.C0 6 www.fairchildsemi.com FDA24N50F N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA24N50F Rev.C0 7 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDA24N50F Rev.C0 8 www.fairchildsemi.com FDA24N50F N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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