UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description • RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. • Low gate charge ( Typ. 13nC) • Low Crss ( Typ. 7pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • ESD Improved capability • RoHS compliant G D S TO-220 FDP Series TO-220F FDPF Series (potted) GD S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP7N60NZ FDPF7N60NZ 600 Units V ±30 V -Continuous (TC = 25oC) 6.5 6.5* 3.9 3.9* ID Drain Current -Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 6.5 A EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ dv/dt Peak Diode Recovery dv/dt 26 26* (Note 2) A 275 (Note 3) mJ 10 V/ns (TC = 25oC) 147 33 W - Derate above 25oC 1.2 0.26 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP7N60NZ FDPF7N60NZ RJC Symbol Thermal Resistance, Junction to Case Parameter 0.85 3.8 RCS Thermal Resistance, Case to Sink Typ. 0.5 - RJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. A 1 Units o C/W www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET September 2010 Device Marking FDP7N60NZ Device FDP7N60NZ Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF7N60NZ FDPF7N60NZ TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250A, VGS = 0V, TJ = 25oC 600 - - V ID = 250A, Referenced to 25oC - 0.6 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 VDS = 480V, TC = 125oC - - 10 A IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 A On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 3 - 5 V Static Drain to Source On Resistance VGS = 10V, ID = 3.25A - 1.05 1.25 gFS Forward Transconductance VDS = 20V, ID = 3.25A - 7.3 - S - 550 730 pF - 70 90 pF - 7 10 pF - 13 17 nC - 3 - nC - 5.6 - nC - 17.5 45 ns - 30 70 ns - 40 90 ns - 25 60 ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 480V, ID = 6.5A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300V, ID = 6.5A RG = 25 (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 6.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 26 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 6.5A - - 1.4 V trr Reverse Recovery Time - 250 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 6.5A dIF/dt = 100A/s - 1.4 - C (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L =13mH, IAS = 6.5A, VDD = 50V, RG = 25, Starting TJ = 25°C 3: ISD 6.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP7N60NZ / FDPF7N60NZ Rev. A 2 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 20 ID, Drain Current[A] 10 ID, Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 1 10 o 150 C o 25 C 1 o -55 C *Notes: 1. 250s Pulse Test * Notes : 1. VDS = 20V 2. 250s Pulse Test o 2. TC = 25 C 0.1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 1.8 1.6 1.4 VGS = 10V 1.2 VGS = 20V 1.0 o 150 C 10 o 25 C Notes: 1. VGS = 0V 2. 250s Pulse Test o * Note : TJ = 25 C 0.8 0 2 4 6 8 10 ID, Drain Current [A] 12 1 0.4 14 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss Coss 100 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss * Note: 1. VGS = 0V 2. f = 1MHz 1 0.1 1.4 10 1000 10 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 5000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.0 RDS(on) [], Drain-Source On-Resistance 4 1 10 VDS, Drain-Source Voltage [V] FDP7N60NZ / FDPF7N60NZ Rev. A VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 * Note : ID = 6.5A 0 30 3 0 2 4 6 8 10 Qg, Total Gate Charge [nC] 12 14 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs Temperature 3.0 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250uA 0.8 -100 -50 0 50 100 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10V 2. ID = 3.25A 0.5 0 -100 150 Figure 9. Maximum Safe Operating Area -FDPF7N60NZ -50 0 50 100 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current -FDP7N60NZ 100 100 30s ID, Drain Current [A] ID, Drain Current [A] 10s 100s 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC * Notes : 0.1 100s 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) o 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] DC * Notes : 0.1 o 1. TC = 25 C 0.01 150 2. TJ = 150 C 3. Single Pulse 0.01 1000 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs Case Temperature ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] FDP7N60NZ / FDPF7N60NZ Rev. A 150 4 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET Typical Performance Characteristics (Continued) FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET Figure 12. Transient Thermal Response Curve -FDPF7N60NZ Thermal Response [ZJC] 5 0.5 1 0.2 0.1 0.05 0.1 PDM t1 0.02 0.01 o 1. ZJC(t) = 3.8 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 t2 * Notes : -4 10 -3 10 -2 -1 0 1 2 10 10 10 10 Rectangular Pulse Duration [sec] 10 3 10 Figure 13. Transient Thermal Response Curve -FDP7N60NZ Thermal Response [ZJC] 5 1 0.5 0.2 0.1 0.1 PDM 0.05 0.02 t1 0.01 0.01 t2 * Notes : Single pulse o 1. ZJC(t) = 0.85 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 0.001 -5 10 FDP7N60NZ / FDPF7N60NZ Rev. A -4 10 -3 10 -2 -1 10 10 1 Rectangular Pulse Duration [sec] 5 10 2 10 3 10 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP7N60NZ / FDPF7N60NZ Rev. A 6 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP7N60NZ / FDPF7N60NZ Rev. A 7 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FDP7N60NZ / FDPF7N60NZ Rev. A 8 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET Package Dimensions (Continued) TO-220F * Front/Back Side Isolation Voltage : 2500V Dimensions in Millimeters FDP7N60NZ / FDPF7N60NZ Rev. A 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FDP7N60NZ / FDPF7N60NZ Rev. A 10 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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