FAIRCHILD FDPF7N60NZ

UniFET-II TM
FDP7N60NZ / FDPF7N60NZ
N-Channel MOSFET
600V, 6.5A, 1.25
Features
Description
• RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
• Low gate charge ( Typ. 13nC)
• Low Crss ( Typ. 7pF)
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD Improved capability
• RoHS compliant
G D S
TO-220
FDP Series
TO-220F
FDPF Series
(potted)
GD S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP7N60NZ
FDPF7N60NZ
600
Units
V
±30
V
-Continuous (TC = 25oC)
6.5
6.5*
3.9
3.9*
ID
Drain Current
-Continuous (TC = 100oC)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
6.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
26
26*
(Note 2)
A
275
(Note 3)
mJ
10
V/ns
(TC = 25oC)
147
33
W
- Derate above 25oC
1.2
0.26
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
A
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP7N60NZ
FDPF7N60NZ
RJC
Symbol
Thermal Resistance, Junction to Case
Parameter
0.85
3.8
RCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. A
1
Units
o
C/W
www.fairchildsemi.com
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
September 2010
Device Marking
FDP7N60NZ
Device
FDP7N60NZ
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF7N60NZ
FDPF7N60NZ
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TJ = 25oC
600
-
-
V
ID = 250A, Referenced to 25oC
-
0.6
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
-
-
1
VDS = 480V, TC = 125oC
-
-
10
A
IGSS
Gate to Body Leakage Current
VGS = ±25V, VDS = 0V
-
-
±10
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3
-
5
V
Static Drain to Source On Resistance
VGS = 10V, ID = 3.25A
-
1.05
1.25

gFS
Forward Transconductance
VDS = 20V, ID = 3.25A
-
7.3
-
S
-
550
730
pF
-
70
90
pF
-
7
10
pF
-
13
17
nC
-
3
-
nC
-
5.6
-
nC
-
17.5
45
ns
-
30
70
ns
-
40
90
ns
-
25
60
ns
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 480V, ID = 6.5A
VGS = 10V
(Note 4, 5)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 300V, ID = 6.5A
RG = 25
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
6.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
26
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.5A
-
-
1.4
V
trr
Reverse Recovery Time
-
250
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 6.5A
dIF/dt = 100A/s
-
1.4
-
C
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =13mH, IAS = 6.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 6.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP7N60NZ / FDPF7N60NZ Rev. A
2
www.fairchildsemi.com
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
20
ID, Drain Current[A]
10
ID, Drain Current[A]
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1
10
o
150 C
o
25 C
1
o
-55 C
*Notes:
1. 250s Pulse Test
* Notes :
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
0.1
0.1
0.1
1
VDS, Drain-Source Voltage[V]
10
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5
6
7
VGS, Gate-Source Voltage[V]
100
IS, Reverse Drain Current [A]
1.8
1.6
1.4
VGS = 10V
1.2
VGS = 20V
1.0
o
150 C
10
o
25 C
Notes:
1. VGS = 0V
2. 250s Pulse Test
o
* Note : TJ = 25 C
0.8
0
2
4
6
8
10
ID, Drain Current [A]
12
1
0.4
14
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Ciss
Coss
100
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Crss
* Note:
1. VGS = 0V
2. f = 1MHz
1
0.1
1.4
10
1000
10
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
5000
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.0
RDS(on) [],
Drain-Source On-Resistance
4
1
10
VDS, Drain-Source Voltage [V]
FDP7N60NZ / FDPF7N60NZ Rev. A
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 6.5A
0
30
3
0
2
4
6
8
10
Qg, Total Gate Charge [nC]
12
14
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FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs Temperature
3.0
1.1
1.0
0.9
* Notes :
1. VGS = 0V
2. ID = 250uA
0.8
-100
-50
0
50
100
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10V
2. ID = 3.25A
0.5
0
-100
150
Figure 9. Maximum Safe Operating Area
-FDPF7N60NZ
-50
0
50
100
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
-FDP7N60NZ
100
100
30s
ID, Drain Current [A]
ID, Drain Current [A]
10s
100s
10
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
* Notes :
0.1
100s
10
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
o
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
DC
* Notes :
0.1
o
1. TC = 25 C
0.01
150
2. TJ = 150 C
3. Single Pulse
0.01
1000
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current vs Case Temperature
ID, Drain Current [A]
8
6
4
2
0
25
50
75
100
125
o
TC, Case Temperature [ C]
FDP7N60NZ / FDPF7N60NZ Rev. A
150
4
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FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Figure 12. Transient Thermal Response Curve
-FDPF7N60NZ
Thermal Response [ZJC]
5
0.5
1
0.2
0.1
0.05
0.1
PDM
t1
0.02
0.01
o
1. ZJC(t) = 3.8 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-5
10
t2
* Notes :
-4
10
-3
10
-2
-1
0
1
2
10
10
10
10
Rectangular Pulse Duration [sec]
10
3
10
Figure 13. Transient Thermal Response Curve
-FDP7N60NZ
Thermal Response [ZJC]
5
1
0.5
0.2
0.1
0.1
PDM
0.05
0.02
t1
0.01
0.01
t2
* Notes :
Single pulse
o
1. ZJC(t) = 0.85 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
-5
10
FDP7N60NZ / FDPF7N60NZ Rev. A
-4
10
-3
10
-2
-1
10
10
1
Rectangular Pulse Duration [sec]
5
10
2
10
3
10
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FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP7N60NZ / FDPF7N60NZ Rev. A
6
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FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDP7N60NZ / FDPF7N60NZ Rev. A
7
www.fairchildsemi.com
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP7N60NZ / FDPF7N60NZ Rev. A
8
www.fairchildsemi.com
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Package Dimensions
(Continued)
TO-220F
* Front/Back Side Isolation Voltage : 2500V
Dimensions in Millimeters
FDP7N60NZ / FDPF7N60NZ Rev. A
9
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
FDP7N60NZ / FDPF7N60NZ Rev. A
10
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FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
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