MCC BAV19W THRU BAV21W omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • 410mW Small Signal Diodes 120 to 250 Volts Silicon Epitaxial Planar Diodes For General Purpose This diode is also available in other case. Mechanical Data • • • SOD123 Case: SOD-123, Molded Plastic Weight: approx. 0.01g Marking code: BAV19W=A8 BAV20W=T2 BAV21W=T3 A B Maximum Ratings Symbol VR V RRM IF IF(AV) IFRM IFSM Ptot RJA TJ TSTG Rating Continuous Reverse Voltage BAV19W BAV20W BAV21W Repetitive Peak Reverse Voltage BAV19W BAV20W BAV21W Forward DC Current at Tamb=25OC(1) Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb=25OC(1) Repetitive Peak Forward Current at f>50Hz, Tamb=25OC(1) Surge Forward Current at t<1s, Tj=25OC Power Dissipation at Tamb=25OC(1) Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Rating 100 150 200 120 200 250 250 Unit 200 mA E V V H D mA J G 625 mA 1.0 410 375 -55 to +150 -55 to +150 A mW mW O C O C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol VF C Parameter Min Typ Forward Voltage (IF=100mA) ----(IF=200mA) ----IR Leakage Current --(V R=100V) BAV19W ----(VR=100V, Tj=100 OC) BAV19W ----(V R=150V) BAV20W ----(VR=150V, Tj=100 OC) BAV20W ----(V R=200V) BAV21W ----(VR=200V, Tj=100 OC) BAV21W --rf Dynamic Forward Resistance --5.0 (IF=10mA) Ctot Capacitance --1.5 (VR=0, f=1.0MHz) trr Reverse Recovery Time (IF=30mA, IR=30mA) ----(Irr=3.0mA, RL=100OHMS) *(1) Valid provided that leads are kept at ambient temperature Max 1.00 1.25 Units 100 15 100 15 100 15 nA uA nA uA nA uA --- OHM --- pF 50 ns V DIM A B C D E G H J DIMENSIONS INCHES MM MIN MAX MIN MAX .140 .152 3.55 3.85 .100 .112 2.55 2.85 .055 .071 1.40 1.80 ----.053 ----1.35 .012 .031 0.30 .78 .006 ----0.15 --------.01 ----.25 ----.006 ----.15 SUGGESTED SOLDER PAD LAYOUT www.mccsemi.com 0.093" 0.048” 0.036” NOTE BAV19W thru BAV21W MCC www.mccsemi.com BAV19W thru BAV21W MCC Ω www.mccsemi.com