MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MPSA13 MPSA14 Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC Pin Configuration Bottom View C B NPN Silicon Darlington Transistor TO-92 E A Maximum Ratings Symbol V CES V CBO V EBO IC PD PD TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @TA =25OC Derate above 25OC Total Device Dissipation @TA =25OC Derate above 25OC Junction Temperature Storage Temperature Rating 30 30 10 500 625 5.0 1.5 12 -55 to +150 -55 to +150 E Unit V V V mA mW mW/ OC W mW/ OC O C O C B C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CES ICBO IEBO Collector-Emitter Breakdown Voltage (IC=100uAdc, IB =0) Collector Cutoff Current (VCB=30Vdc, IE =0) Emitter Cutoff Current (V EB =10Vdc, IC=0) 30 Vdc 100 nAdc 100 nAdc D ON CHARACTERISTICS(1) hFE(1) hFE(2) VCE(sat) VBE(on) DC Current Gain (IC=10mAdc, V CE=5.0Vdc) MPSA13 MPSA14 DC Current Gain (IC=100mAdc, V CE=5.0Vdc) MPSA 13 MPSA14 Collector-Emitter Saturation Voltage (IC=100mAdc, IB =0.1mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, V CE=5.0Vdc) G 5000 10000 DIMENSIONS 10000 20000 1.5 Vdc 2.0 Vdc DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 SMALL-SIGNAL CHARACTERISTICS fT 1. 2. Current-Gain – Bandwidth Product (2) (IC=10mAdc, V CE=5.0Vdc, f=100MHz) Pulse Test: Pulse Width<300us, Duty Cycle<2.0% f T =|hfe| x ftest 125 MHz www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC MPSA13 thru MPSA14 RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 µA 0.1 0.07 0.05 10 µA 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 14 200 IC = 10 µA 70 50 100 µA 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 50k 100k Figure 3. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 10 10 µA 8.0 100 µA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 Figure 4. Total Wideband Noise Voltage 1000 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) Figure 5. Wideband Noise Figure www.mccsemi.com 500 1000 MCC MPSA13 thru MPSA14 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25°C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 hFE, DC CURRENT GAIN TJ = 125°C 100k 70k 50k 25°C 30k 20k 10k 7.0k 5.0k -55°C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 200k VCE = 5.0 V f = 100 MHz TJ = 25°C 500 -1.0 -2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RVC FOR VCE(sat) -55°C TO 25°C -3.0 25°C TO 125°C -4.0 VB FOR VBE -5.0 -55°C TO 25°C -6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients www.mccsemi.com 500 MCC r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSA13 thru MPSA14 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE 0.03 ZθJC(t) = r(t) • RθJCTJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJATJ(pk) - TA = P(pk) ZθJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 300 200 FIGURE A 1.0 ms TA = 25°C tP TC = 25°C 100 µs PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 1/f 40 t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data www.mccsemi.com