MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage VEBO 10 V Collector Current IC 500 mA Power Dissipation Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 100 mA MPSA13 MPSA14 MPSA13 MPSA14 Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 10 V Collector Emitter Breakdown Voltage at IC = 100 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On Voltage at IC = 100 mA, VCE = 5 V Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz C C Symbol Min. Max. Unit hFE hFE hFE hFE 5000 10000 10000 20000 - - ICBO - 100 nA IEBO - 100 nA V(BR)CES 30 - V VCE (sat) - 1.5 V VBE(on) - 2 V fT 125 - MHz SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 07/12/2002 MPSA13 / 14 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 07/12/2002