MCC MMBTA13 MMBTA14 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • • NPN Darlington Amplifier Transistor Operating And Storage Temperatures –55OC to 150OC RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) Capable of 225mWatts of Power Dissipation Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N SOT-23 Electrical Characteristics @ 25 C Unless Otherwise Specified O Symbol Parameter Min Max A D Units OFF CHARACTERISTICS V (BR)CEO 30 Vdc V (BR)CBO Collector-Emitter Breakdown Voltage* (IC=100uAdc, IB =0) Collector-Base Breakdown Voltage 30 Vdc V (BR)EBO Emitter-Base Breakdown Voltage 10 Vdc IC Collector Current-Continuous 300 mAdc ICBO Collector Cutoff Current (VCB =30Vdc, IE =0) Emitter Cutoff Current (VEB =10Vdc, IC=0) IEBO 100 nAdc 100 nAdc C F E G H Collector Base DC Current Gain* MMBTA13 MMBTA14 (IC=10mAdc, VCE=5.0Vdc) MMBTA13 MMBTA14 V CE(sat) (IC=150mAdc, V CE=1.0Vdc) V BE(sat) Emitter 5000 10000 DIMENSIONS 10000 20000 Collector-Emitter Saturation Voltage (IC=100mAdc, IB =0.1mAdc) Base-Emitter Saturation Voltage (IC=100mAdc,V CE=5.0Vdc) 1.5 Vdc 2.0 Vdc SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo J K ON CHARACTERISTICS hFE Current Gain-Bandwidth Product (IC=10mAdc, VCE=5.0Vdc, f=100MHz) 125 DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MHz Output Capacitance (VCB=10Vdc, IE =0, f=1.0MHz) 8.0 pF Input Capacitance (VBE =0.5Vdc, IC=0, f=1.0MHz) 15 pF 10 25 225 60 ns ns ns ns MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 Delay Time Rise Time Storage Time Fall Time (V CC=30Vdc, VBE =0.5Vdc IC=150mAdc, IB1=15mAdc) (V CC=30Vdc, IC=150mAdc IB1=IB2=15mAdc) MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 SWITCHING CHARACTERISTICS td tr ts tf B .079 2.000 .037 .950 .037 .950 www.mccsemi.com inches mm MCC MMBTA13 MMBTA14 500 i n, NOISE CURRENT (pA) 200 en, NOISE VOLTAGE (nV) 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 100 10 µA 50 100 µA 20 5.0 IC = 1.0 mA 0.3 0.2 100 µA 0.1 0.07 0.05 IC = 1.0 mA 10 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 10 µA 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current 14 BANDWIDTH = 10 Hz TO 15.7 kHz 70 IC = 10 µA 50 100 µA 30 20 1.0 mA 10 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 100 50k 100k 10 10 µA 8.0 100 µA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 Figure 4. Total Wideband Noise Voltage 1000 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) Figure 5. Wideband Noise Figure www.mccsemi.com 500 1000 MCC MMBTA13 MMBTA14 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 255C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 hFE, DC CURRENT GAIN TJ = 1255C 100k 70k 50k 255C 30k 20k 10k 7.0k 5.0k -555C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RθV, TEMPERATURE COEFFICIENTS (mV/5C) TJ = 255C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 255C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 200k VCE = 5.0 V f = 100 MHz TJ = 255C 500 -1.0 -2.0 *APPLIES FOR IC/IB 3 hFE/3.0 255C TO 1255C *RVC FOR VCE(sat) -555C TO 255C -3.0 255C TO 1255C -4.0 VB FOR VBE -5.0 -555C TO 255C -6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients www.mccsemi.com 500 MCC r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBTA13 MMBTA14 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE 0.03 ZθJC(t) = r(t) • RθJCTJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJATJ(pk) - TA = P(pk) ZθJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 300 200 FIGURE A 1.0 ms TA = 25°C tP TC = 25°C 100 µs PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 1/f 40 t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data www.mccsemi.com