MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# PN2222A Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B NPN General Purpose Amplifier E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max TO-92 Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX A Collector-Emitter Breakdown Voltage* (I C=10mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µAdc, IE=0) Emitter-Base Breakdown Voltage (I E=10µAdc, IC=0) Base Cutoff Current (VCE=60Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=60Vdc, VBE=3.0Vdc) 40 Vdc 75 Vdc 6.0 Vdc 20 nAdc 10 nAdc E B ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain* (I C=0.1mAdc, VCE=10Vdc) (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=150mAdc, VCE=10Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) C 35 50 75 100 50 40 0.6 300 0.3 1.0 Vdc 1.2 2.0 Vdc D SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain-Bandwidth Product (I C=20mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=10Vdec, IE=0, f=100kHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=100kHz) Noise Figure (IC=100µAdc, VCE=10Vdc, RS=1.0kΩ f=1.0kHz) 300 MHz 8.0 pF 25 pF 4.0 dB 10 25 225 60 ns ns ns ns SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width Delay Time (VCC=30Vdc, VBE=0.5Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µs, Duty Cycle ≤ 2.0% G DIMENSIONS DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC PN2222A Collector Current vs Collector-Emitter Voltage DC Current Gain vs Collector Current 480 8 VCE = 5.0V 35µA 30µA 400 6 320 25µA IC - (mA) hFE 20µA 4 240 15µA 160 10µA 2 5µA 80 0 0.1 10 1 10 100 20 30 40 50 VCE- (V) IC (mA) Maximum Power Dissipation vs Ambient Temperature Collector Current vs Collector-Emitter Voltage 800 250 IB = 4mA 600 200 TO-92 IB = 3mA PD(MAX) - (mW) IC - (mA) IB = 2mA 150 400 IB = 1mA 100 200 SOT-23 0 50 .5 0 1.0 1.5 0 2.0 50 100 150 200 TA - (°C) VCE - (V) Contours of Constant Gain Bandwidth Product (fT) Input and Output Capacitance vs Reverse Bias Voltage 24 12 20 f = 1.0MHz 10 CIB 16 pF VCE - (V) 12 8 6 8 COB 4 4 0 0.1 1.0 10 IC - (mA) *50MHz increments from 150 to 250MHz and 260MHz 100 2 0.1 1.0 Volts - (V) www.mccsemi.com 10 MCC PN2222A Base Saturation Voltage vs Collector Current Collector Saturation Voltage vs Collector Current 1.4 1.4 1.0 IC/IB = 10 1.0 .6 .6 VCE(SAT) - (V) VBE(SAT) - (V) hfe=10 .1 .1 hfe=20 .06 TA = 125°C .06 TA = 25°C .01 1.0 10 1000 100 .01 0.1 1.0 IC - (mA) 10 100 IC - (mA) Base Saturation Voltage vs Collector Current 14 Collector Saturation Voltage vs Collector Current 4 IC/IB = 10 TA = 25°C 10 1 6 .6 VBE(SAT) - (V) VCE(SAT) - (V) 1 0.6 .1 TA=25°C .06 hfe=20 hfe=10 TA=125°C 0.1 1.0 10 1000 100 .01 0.1 1.0 10 IC - (mA) IC - (mA) Switching Times vs Collector Current 1000 IB1 = IB2 = IC/10 ts 100 T - (ns) tr 10 tf td 1.0 1.0 10 100 IC - (mA) www.mccsemi.com 100