MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MPSA55 MPSA56 Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 80V Operating and storage junction temperature range: -55OC to +150 OC Pin Configuration Bottom View C B PNP Silicon Amplifier Transistor E TO-92 Maximum Ratings Symbol V CEO V CBO V EBO IC PD PD TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @TA =25OC Derate above 25OC Total Device Dissipation @TA =25OC Derate above 25OC Junction Temperature Storage Temperature A Rating 80 80 4.0 500 625 5.0 1.5 12 -55 to +150 -55 to +150 E Unit V V V mA mW mW/ OC W mW/ OC O C O C B C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)EBO ICES ICBO Collector-Emitter Breakdown Voltage(1) (IC=1.0mAdc, IB =0) MPSA55 MPSA56 Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCE=60Vdc, IB =0) Collector Cutoff Current (VCB=60Vdc, IE =0) MPSA55 (VCB=80Vdc, IE =0) MPSA56 60 80 4.0 Vdc D Vdc 0.1 uAdc 0.1 0.1 uAdc G ON CHARACTERISTICS (1) hFE(1) hFE(2) VCE(sat) VBE(on) DC Current Gain (IC=10mAdc, V CE=1.0Vdc) DC Current Gain (IC=100mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, V CE=1.0Vdc) 100 DIMENSIONS 100 0.25 Vdc 1.2 Vdc SMALL-SIGNAL CHARACTERISTICS fT 1. 2. Current-Gain – Bandwidth Product (3) (IC=100mAdc, V CE=1.0Vdc, 50 f=100MHz) MPSA55 MPSA56 Pulse Test: Pulse Width<300us, Duty Cycle<2.0% f T is defined as the frequency at which |h fe| extrapolates to unity. DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MHz www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE