MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2A B E SOT-23 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max A Units D OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µAdc, IE=0) Emitter-Base Breakdown Voltage (I E=10µAdc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) 40 Vdc 40 Vdc 5.0 Vdc 50 nAdc 50 nAdc C F B E H G J ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=50mAdc, VCE=1.0Vdc) (I C=100mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) K 60 80 100 60 30 0.65 DIMENSIONS 300 0.25 0.4 Vdc 0.85 0.95 Vdc SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain-Bandwidth Product (I C=10mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=5.0Vdec, IE=0, f=1.0MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Noise Figure (IC=100µAdc, VCE=5.0Vdc, RS=1.0kΩ f=10Hz to 15.7kHz) 250 DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 pF 10.0 pF 4.0 dB Delay Time (VCC=3.0Vdc, VBE=0.5Vdc Rise Time IC=10mAdc, IB1=1.0mAdc) Storage Time (VCC=3.0Vdc, IC=10mAdc Fall Time IB1=IB2=1.0mAdc) ≤ 300µs, Duty Cycle ≤ 2.0% 35 35 225 75 ns ns ns ns MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE .031 .800 .035 .900 .079 2.000 SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Suggested Solder Pad Layout MHz 4.5 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 .037 .950 www.mccsemi.com .037 .950 inches mm MCC MMBT3906 Base-Emitter ON Voltage vs Collector Current DC Current Gain vs Collector Current 220 1.2 VCE = 1.0V 200 1.0 160 VCE = 5.0V TA = 25°C 0.8 hFE VBE(ON) - (V) 120 0.6 80 0.4 40 0.2 0.1 10 1 TA = 100°C 0 0.1 100 1.0 Collector-Emitter Saturation Volatge vs Collector Current 1.4 IC/IB = 10 TA = 25°C 0.5 100 Base-Emitter Saturation Voltage vs Collector Current 0.6 IC/IB = 10 TA = 25°C 1.2 0.4 VCE(SAT) - (V) 10 IC - (mA) IC (mA) 1.0 VBE(SAT) - (V) 0.3 0.8 0.2 0.6 0.1 0.4 0 1.0 100 10 0.2 1.0 1000 10 1000 100 IC - (mA) IC - (mA) Common Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 1.0 COBO TA = 25°C TO-92 8 Collector-Base Diode Reverse Current vs Temperature 100 VCB = 20V 10 pF ICBO - (mA) 6 CIBO 4 1.0 2 0.1 0 25 50 75 TJ - (°C) 100 125 150 0 0.1 1.0 Volts - (V) www.mccsemi.com 10 MCC MMBT3906 Maximum Power Dissipation vs Ambient Temperature Noise Figure vs Source Resistance 12 800 VCE = 5.0V f = 1.0kHz 10 600 TO-92 8 PD(MAX) - (mW) IC = 1.0mA NF - (dB) 400 6 IC = 100µA 4 200 SOT-23 2 0 0 50 100 150 0 0.1 200 1.0 TA - (°C) 10 100 RS - (kΩ) Contours of Constant Gain Bandwidth Product (fT) Current Gain 24 1000 VCE = 10V f = 1.0kHz 20 16 VCE - (V) 12 hfe 100 8 4 0 0.1 1.0 10 100 IC - (mA) *100MHz increments from 100 to 700, 750 and 800MHz 10 0.1 1.0 10 IC - (mA) Switching Times vs Collector Current Noise Figure vs Frequency 1000 6 VCE = 5.0V IB1 = IB2 = IC/10 5 ts 4 NF - (dB) 100 T - (ns) IC = 100µA RS = 200Ω 3 2 10 IC = 1.0mA RS = 200Ω 1 0 tf tr td IC = 100µA RS = 2.0kΩ 0.1 1.0 10 100 1.0 1.0 10 IC - (mA) f - (kHz) www.mccsemi.com 100 MCC MMBT3906 Output Admittance Input Impedance 10 1000 VCE = 10V f = 1.0kHz VCE = 10V f = 1.0kHz hoe - (µΩ) hie - (kΩ) 1.0 100 0.1 0.1 10 1.0 10 0.1 IC - (mA) 1.0 IC - (mA) 10 Turn On and Turn Off Times vs Collector Current Voltage Feedback Ratio 100 1000 -4 hfe - (X10 ) toff 100 T - (ns) 10 ton 10 ton IB1 = IC/10 VBE(OFF) = 0.5V toff IB1 = IB2 = IC/10 1.0 0.1 1.0 IC - (mA) 10 1.0 1.0 10 IC - (mA) www.mccsemi.com 100