MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N5832 Features • Through Hole Package Plastic-case Bipolar NPN Transistor Pin Configuration Bottom View C B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max TO-92 Units OFF CHARACTERISTICS V(BR)CEO A V(BR)CBO Collector-Emitter Breakdown Voltage (I C=300mAdc) Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage ICBO 140 Vdc 160 Vdc 5.0 Vdc Collector-Base Breakdown Current (VCE=120Vdc) 50 E B nAdc ON CHARACTERISTICS hFE DC Current Gain* C 175 500 (I C=10mAdc, VCE=5.0Vdc) VCE(sat) Collector-Emitter Saturation Voltage (I C=10mAdc) 0.2 Vdc D SMALL-SIGNAL CHARACTERISTICS fT Cob NF Note: Current Gain-Bandwidth Product (I C=10mAdc) Output Capacitance 100 MHz 4.0 pF ---- dB G Noise Figure Maximum at typical JEDEC condition V(BR)CER @ R=10 OHMS DIMENSIONS DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE