UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D D G G S D-PAK FDD Series G I-PAK FDU Series D S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDD5N53/FDU5N53 530 Units V ±30 V -Continuous (TC = 25oC) 4 -Continuous (TC = 100oC) 2.4 - Pulsed A IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4 A EAR Repetitive Avalanche Energy (Note 1) 4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 16 A (Note 2) 256 mJ (TC = 25oC) 40 W - Derate above 25oC 0.3 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 1.4 RθJA Thermal Resistance, Junction to Ambient 110 ©2009 Fairchild Semiconductor Corporation FDD5N53/FDU5N53 Rev. A 1 Units o C/W www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET January 2009 Device Marking FDD5N53 Device FDD5N53TM Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 FDD5N53 FDD5N53TF D-PAK 380mm 16mm 2000 FDU5N53 FDU5N53TU I-PAK - - 70 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TJ = 25oC 530 - - V ID = 250μA, Referenced to 25oC - 0.6 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 530V, VGS = 0V - - 1 VDS = 424V, TC = 125oC - - 10 μA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 1.25 1.5 Ω - 4.3 - S - 480 640 pF - 66 88 pF nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 2A gFS Forward Transconductance VDS = 40V, ID = 2A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) - 5 8 pF - 11 15 nC - 3 - nC - 5 - nC - 13 36 ns - 22 54 ns - 28 66 ns - 20 50 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 16 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4A - - 1.4 V trr Reverse Recovery Time - 300 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5A dIF/dt = 100A/μs - 1.8 - μC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 32mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDD5N53/FDU5N53 Rev. A 2 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 20 20 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] 10 ID,Drain Current[A] Figure 2. Transfer Characteristics 1 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test 0.1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.04 0.1 1 10 VDS,Drain-Source Voltage[V] 0.1 30 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] 70 2.5 VGS = 10V 2.0 VGS = 20V 1.5 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o *Note: TJ = 25 C 1.0 0 3 6 ID, Drain Current [A] 9 1 0.4 12 Figure 5. Capacitance Characteristics 1000 1.6 10 VGS, Gate-Source Voltage [V] Ciss 2. 250μs Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 750 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.0 RDS(ON) [Ω], Drain-Source On-Resistance 5 6 7 VGS,Gate-Source Voltage[V] *Note: 1. VGS = 0V 2. f = 1MHz 500 Coss 250 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 *Note: ID = 5A 0 1 10 VDS, Drain-Source Voltage [V] FDD5N53/FDU5N53 Rev. A 30 0 3 4 8 Qg, Total Gate Charge [nC] 12 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -75 175 Figure 9. Maximum Safe Operating Area -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Drain Current vs. Case Temperature 4.5 30 30μs 10 4 100μs ID, Drain Current [A] ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 2A 0.5 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: 3 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 3 1 0.5 0.2 PDM 0.1 0.1 t1 t2 0.05 *Notes: 0.02 o 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 FDD5N53/FDU5N53 Rev. A -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Typical Performance Characteristics (Continued) FDD5N53 / FDU5N53 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD5N53/FDU5N53 Rev. A 5 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDD5N53/FDU5N53 Rev. A 6 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD5N53/FDU5N53 Rev. A 7 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET Mechanical Dimensions I-PAK Dimensions in Millimeters FDD5N53/FDU5N53 Rev. A 8 www.fairchildsemi.com FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ μSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FDD5N53/FDU5N53 Rev. A 9 www.fairchildsemi.com FDD5N53 / FDU5N53 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.