UniFETTM FDP22N50N N-Channel MOSFET 500V, 22A, 0.22Ω Features Description • RDS(on) = 0.185Ω ( Typ.)@ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 24pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant D G G DS TO-220 FDP Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP22N50N 500 Units V ±30 V -Continuous (TC = 25oC) 22 13.2 ID Drain Current -Continuous (TC = 100oC) - Pulsed A IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 22 A EAR Repetitive Avalanche Energy (Note 1) 31.25 mJ dv/dt Peak Diode Recovery dv/dt 10 V/ns 88 A (Note 2) 1000 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 312.5 W 2.5 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP22N50N RθJC Thermal Resistance, Junction to Case 0.4 RθCS Thermal Resistance, Case to Sink Typ. 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2009 Fairchild Semiconductor Corporation FDP22N50N Rev. A 1 Units o C/W www.fairchildsemi.com FDP22N50N N-Channel MOSFET April 2009 Device Marking FDP22N50N Device FDP22N50N Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V - 0.45 - V/oC µA Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 VDS = 400V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 ID = 250µA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.185 0.22 Ω gFS Forward Transconductance VDS = 20V, ID = 11A - 24.4 - S VDS = 25V, VGS = 0V f = 1MHz - 2456 3200 pF - 351 460 pF - 24 50 pF - 49 65 nC - 15 - nC - 19 - nC - 22 55 ns - 50 110 ns - 48 110 ns - 35 80 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400V, ID = 22A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 22A RG = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 22 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 88 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 22A - - 1.4 V trr Reverse Recovery Time 472 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 22A dIF/dt = 100A/µs - 6.5 - µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.1mH, IAS = 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 22A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FDP22N50N Rev. A 2 www.fairchildsemi.com FDP22N50N N-Channel MOSFET Package Marking and Ordering Information FDP22N50N N-Channel MOSFET Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 50 100 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 *Notes: 1. VDS = 20V 2. 250µs Pulse Test ID,Drain Current[A] ID,Drain Current[A] Typical Performance Characteristics 1 10 o o 25 C 150 C o -55 C 1 *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 0.2 0.05 0.1 0.1 1 VDS,Drain-Source Voltage[V] 3 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 VGS,Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.25 VGS = 10V 0.20 VGS = 20V o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 2. 250µs Pulse Test *Note: TJ = 25 C 1 0.2 0.15 0 10 20 30 ID, Drain Current [A] 40 50 Figure 5. Capacitance Characteristics 3000 1.4 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss Ciss VGS, Gate-Source Voltage [V] 4000 0.6 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 5000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.30 RDS(ON) [Ω], Drain-Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz 2000 1000 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss *Note: ID = 22A 0 0.1 FDP22N50N Rev. A 0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 0.0 -75 175 Figure 9. Maximum Safe Operating Area - FDP22N50N 200 100 *Notes: 1. VGS = 10V 2. ID = 11A 0.5 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Drain Current vs. Case Temperature 25 10µs 20 1ms 10 ID, Drain Current [A] ID, Drain Current [A] 100µs 10ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 1. TC = 25 C 15 10 5 o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDP22N50N Thermal Response [ZθJC] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 t2 *Notes: 0.02 0.01 o 0.01 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.003 -5 10 FDP22N50N Rev. A -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 4 10 2 10 www.fairchildsemi.com FDP22N50N N-Channel MOSFET Typical Performance Characteristics (Continued) FDP22N50N N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP22N50N Rev. A 5 www.fairchildsemi.com FDP22N50N N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) GS G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lta g e D r o p FDP22N50N Rev. A 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 FDP22N50N Rev. A 7 www.fairchildsemi.com FDP22N50N N-Channel MOSFET Mechanical Dimensions FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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