UniFET-II TM FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET 500V, 4.2A, 1.75Ω Features Description • RDS(on) = 1.57Ω ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 9nC) • Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant D G G D S TO-220 FDP Series TO-220F FDPF Series (potted) GDS S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP5N50NZF FDPF5N50NZF 500 Units V ±25 V -Continuous (TC = 25oC) 4.2 4.2* -Continuous (TC = 100oC) 2.5 2.5* - Pulsed 16 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current ( Note 1) 4.2 A EAR Repetitive Avalanche Energy (Note 1) 7.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 1) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 16* - Derate above 25oC A 165 (Note 3) (TC = 25oC) A mJ 20 V/ns 78 30 W 0.62 0.24 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP5N50NZF FDPF5N50NZF RθJC Thermal Resistance, Junction to Case 1.6 4.1 RθCS Thermal Resistance, Case to Heat Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2012 Fairchild Semiconductor Corporation FDP5N50NZF / FDPF5N50NZF Rev. C0 1 Units o C/W www.fairchildsemi.com FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET February 2012 Device Marking FDP5N50NZF Device FDP5N50NZF Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF5N50NZF FDPF5N50NZF TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V - 0.5 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 VDS = 400V, VGS = 0V,TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 3.0 - 5.0 V - 1.57 1.75 Ω - 4.2 - S ID = 250μA, Referenced to 25oC μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 2.1A VDS = 20V, ID = 2.1A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V ID = 4.2A VGS = 10V (Note 4) - 365 485 pF - 50 65 pF - 4 8 pF - 9 12 nC - 2 - nC - 4 - nC - 12 35 ns - 19 50 ns - 31 70 ns - 22 55 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 4.2A VGS = 10V, RGEN = 25Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 16 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4.2A - - 1.5 V trr Reverse Recovery Time - 87 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 4.2A dIF/dt = 100A/μs - 0.15 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 18.7mH, IAS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FDP5N50NZF / FDPF5N50NZF Rev. C0 2 www.fairchildsemi.com FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 1 ID, Drain Current[A] ID, Drain Current[A] Figure 2. Transfer Characteristics 10 10 0.1 o 150 C 1 o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.03 0.1 0.1 3 25 1 10 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 8 50 3.2 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 4 5 6 7 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.6 2.8 2.4 VGS = 10V VGS = 20V 2.0 1.6 10 o 150 C *Note: TC = 25 C 1.2 0 2 4 6 ID, Drain Current [A] 8 1 0.4 10 Figure 5. Capacitance Characteristics o 25 C *Notes: 1. VGS = 0V o 2. 250μs Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 6. Gate Charge Characteristics 10 800 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 Capacitances [pF] o -55 C Ciss 400 *Note: 1. VGS = 0V 2. f = 1MHz Coss 200 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 *Note: ID = 4.2A 0 1 10 VDS, Drain-Source Voltage [V] FDP5N50NZF / FDPF5N50NZF Rev. C0 0 30 3 2 4 6 8 Qg, Total Gate Charge [nC] 10 www.fairchildsemi.com FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area vs. Case Temperature-FDPF5N50NZF 30 30μs 10 1.10 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.05 1.00 0.95 0.90 -75 -50 100μs 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250μA 0 50 100 o TJ, Junction Temperature [ C] o 2. TJ = 150 C 3. Single Pulse 0.01 150 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current 5 ID, Drain Current [A] 4 3 2 1 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve-FDPF5N50NZF 4.3 Thermal Response [ZθJC] 0.5 1 0.2 0.1 PDM 0.05 t1 0.02 0.1 t2 0.01 *Notes: o 1. ZθJC(t) = 4.1 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDP5N50NZF / FDPF5N50NZF Rev. C0 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET Typical Performance Characteristics (Continued) FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5N50NZF / FDPF5N50NZF Rev. C0 5 www.fairchildsemi.com FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP5N50NZF / FDPF5N50NZF Rev. C0 6 www.fairchildsemi.com FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET Package Dimensions TO-220 FDP5N50NZF / FDPF5N50NZF Rev. C0 7 www.fairchildsemi.com FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET Package Dimensions TO-220F * Front/Back Side Isolation Voltage : 2500V Dimensions in Millimeters FDP5N50NZF / FDPF5N50NZF Rev. C0 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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