MICREL MIC94001

MIC94001
Micrel
MIC94001
P-Channel MOSFET
Not Recommended for New Designs
General Description
Features
The MIC94001 is a silicon gate P-channel MOSFET designed for low on-resistance, high-side switch applications.
The MIC94001 has a maximum on-resistance of 0.4Ω at 4.5V
gate-to-source voltage.
Improved ESD protection is provided by the gate protection
network shown in the schematic diagram.
The MIC94001 is supplied in a low-profile version of the
8-lead SOIC package.
The MIC94001 die can be assembled in a 4-terminal configuration with the body not shorted to the source for use in analog
switch applications. Contact the factory for more information.
• 15V minimum drain-to-source breakdown
• 0.4Ω maximum on-resistance at
4.5V gate-to-source
• Functional at 2.7V gate-to-source
• 0.063" maximum height
Applications
•
•
•
•
High-side switch
Power management
Stepper motor control
1.8" PCMCIA disk-drive VCC switch
Ordering Information
Part Number
Temperature Range*
Package
–55°C to +150°C
8-lead SOIC†
MIC94001BLM
* Operating Junction Temperature
† Low Profile Leads, see Package Information
Schematic Information
Pin Configuration
Source
Gate
Drain
Schematic Symbol
S
1
NC
Drain 8
2
Source Drain 7
3
Source Drain 6
4
Gate
6
Drain 5
8-lead Low-Profile SOIC
Package (LM)
G
D
Schematic Diagram
Typical Application
Package Information
0.026 (0.65)
MAX)
MIC94001
0.154 (3.90)
Load
+5V
Pin 1
On
Off
74HC04
0.050 (1.27) 0.016 (0.40)
TYP
TYP
0.193 (4.90)
45°
Power Switch Application
3°–6°
0.063 (1.60) MAX
0.057 (1.45)
0.049 (1.25)
Patent 5,355,008
August 1998
6-37
0.197 (5.0)
0.189 (4.8)
SEATING
PLANE
0.244 (6.20)
0.228 (5.80)
MIC94001
Micrel
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage ................................................ 15V
Gate-to-Source Voltage ................................................ 15V
Continuous Drain Current
TA = 25°C ................................................................. 1.6A
TA = 100°C .................................................................. 1A
Operating Juction Temperature ................. –55°C to +150°
Storage Temperature ............................... –55°C to +150°C
Electrical Characteristics TA = 25°C unless noted.
Total Power Dissipation
TA = 25°C ................................................................... 1W
TA = 100°C .............................................................. 0.4W
Thermal Resistance
θJA ...................................................................................... 125°C/W
θJC ........................................................................................ 76°C/W
Lead Temperature
1/16" from case, 10s ........................................... +300°C
All values are negative. Signs not shown for clarity.
Symbol
Parameter
Condition
Min
VBDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
15
VGS
Gate Threshold Voltage
VDS = VGS, ID = 250µA
1
IGSS
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
Typ
Max
Units
V
3
V
VDS = 0V, VGS = 15V, Note 2
100
nA
VDS = 15V, VGS = 0V
25
µA
VDS = 15V, VGS = 0V, TJ = 125°C
250
µA
ID(ON)
On-State Drain Current
VDS ≥ 10V, VGS = 10V, Note 1
5.5
RDS(ON)
Drain-Source On-State Resist.
VGS = 4.5V, ID = 50mA
0.35
gFS
Forward Transconductance
VDS = 15V, ID = 1A, Note 1
0.7
A
0.40
Ω
S
Note 1: Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%
Note 2: ESD gate protection diode conducts during positive gate-to-source voltage excursions.
On Resistance vs.
Drain Current
2000
0.40
1800
0.35
1600
VGS = 4.5V
1400
0.30
1200
ID (mA)
RDS(ON) (Ω)
Drain Characteristics
0.45
0.25
0.15
VGS = 3.0
800
400
0.05
200
0.4
0.8
1.2
1.6
ID (A) Note 1
VGS = 2.5
VGS = 2.0
600
0.10
0.00
0.0
VGS = 3.5
1000
VGS = 10V
0.20
VGS = 4.0
0
0.0
2.0
6-38
VGS = 1.5
2.5
5.0
7.5 10.0 12.5 15.0
VDS (V) Note 1
August 1998