MICREL MIC94030

MIC94030/94031
Micrel
MIC94030/94031
TinyFET™ P-Channel MOSFET
Preliminary Information
General Description
Features
The MIC94030 and MIC94031 are 4-terminal silicon gate
P-channel MOSFETs that provide low on-resistance in a very
small package.
Designed for high-side switch applications where space is
critical, the MIC94030/1 exhibits an on-resistance of typically
0.75Ω at 4.5V gate-to-source voltage. The MIC94030/1 also
operates with only 2.7V gate-to-source voltage.
The MIC94030 is the basic 4-lead P-channel MOSFET. The
MIC94031 is a variation that includes an internal gate pull-up
resistor that can reduce the system parts count in many
applications.
The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal
configuration improves the θJA (improved heat dissipation)
and makes analog switch applications practical.
The small size, low threshold, and low RDS(on) make the
MIC94030/1 the ideal choice for PCMCIA card sleep mode or
distributed power management applications.
• 13.5V minimum drain-to-source breakdown
• 0.75Ω typical on-resistance
at 4.5V gate-to-source voltage
• 0.45Ω typical on-resistance
at 10V gate-to-source voltage
• Operates with 2.7V gate-to-source voltage
• Separate substrate connection for added control
• Industry’s smallest surface mount package
Applications
•
•
•
•
•
Distributed power management
PCMCIA card power management
Battery-powered computers, peripherals
Hand-held bar-code scanners
Portable communications equipment
Ordering Information
Part Number
Temperature Range*
Package
MIC94030BM4
–55°C to +150°C
SOT-143
MIC94031BM4
–55°C to +150°C
SOT-143
* Operating Junction Temperature
Pin Configuration
6
Typical PCB Layout
PCB heat sink
plane improves
heat dissipation
D
Drain
Substrate
SS
Part Number
Part
Identification
P3x
Gate
Identification
MIC94030BM4
P30
MIC94031BM4
P31
Source
SOT-143 Package (M4)
Schematic Symbol
G
S
PCB traces
Functional Diagrams
S
S
~500kΩ
Source
Gate
G
Substrate
SS
Drain
D
Schematic Symbol
MIC94030
Patents 5,355,008; 5,589,702
1997
6-41
G
Internal
gate-to-source
pull-up resistor
SS
D
MIC94031
MIC94030/94031
Micrel
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse) .................................... 16V
Gate-to-Source Voltage (pulse) .................................... 16V
Continuous Drain Current
TA = 25°C .................................................................... 1A
TA = 100°C ............................................................... 0.5A
Operating Junction Temperature ............... –55°C to +150°
Storage Temperature ............................... –55°C to +150°C
Total Power Dissipation
TA = 25°C ............................................................ 568mW
TA = 100°C .......................................................... 227mW
Thermal Resistance
θJA ...................................................................................... 220°C/W
θJC ..................................................................................... 130°C/W
Lead Temperature
1/16" from case, 10s ........................................... +300°C
Electrical Characteristics Voltage and current values are negative.
Signs not shown for clarity.
Symbol
Parameter
Condition (Note 1)
Min
VBDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
13.5
VGS
Gate Threshold Voltage
VDS = VGS, ID = 250µA
0.6
IGSS
Gate-Body Leakage
VDS = 0V, VGS = 12V, Note 2, Note 3
RGS
Gate-Source Resistor
VDS = 0V, VGS = 12V, Note 2, Note 4
CISS
Input Capacitance
VGS = 0V, VDS = 12V
IDSS
Zero Gate Voltage Drain Current
VDS = 12V, VGS = 0V
VDS = 12V, VGS = 0V, TJ = 125°C
500
Typ
1.0
750
0.010
VDS = 10V, VGS = 10V, Note 5
6.3
RDS(ON)
Drain-Source On-State Resist.
VGS = 10V, ID = 100mA
VGS = 4.5V, ID = 100mA
VGS = 2.7V, ID = 100mA
0.45
0.75
1.20
VDS = 10V, ID = 200mA, Note 5
480
Note 1
Note 2
Note 3
Note 4
Note 5
1.4
V
1
µA
1000
kΩ
100
On-State Drain Current
Forward Transconductance
Units
V
ID(ON)
gFS
Max
pF
25
µA
250
µA
A
1.00
Ω
Ω
Ω
mS
TA = 25°C unless noted. Substrate connected to source for all conditions
ESD gate protection diode conducts during positive gate-to-source voltage excursions.
MIC94030 only
MIC94031 only
Pulse Test: Pulse Width ≤ 80µsec, Duty Cycle ≤ 0.5%
6-42
1997
MIC94030/94031
Micrel
Typical Characteristics
On Resistance vs.
Drain Current at 25°C
On Resistance vs.
Drain Current at 125°C
1.50
1.50
80µs Pulse Test
80µs Pulse Test
1.25
1.00
RDS(ON) (Ω)
VG = 4.5V
0.75
0.50
VG = 10V
0.25
0.00
0.0
0.5
1.0
ID (A)
1.5
VGS
120
1.8V
100
80
1.6V
60
40
20
1.4V
1.2V
0
0.0
0.5
1.0
1.5
2.0
DRAIN-TO-SOURCE VOLTAGE (V)
0.50
VG = 10V
0.5
1.0
ID (A)
1.5
2.0
Drain Characteristics
DRAIN CURRENT (A)
DRAIN CURRENT (mA)
2.0V
0.75
0.00
0.0
2.0
3.5
140
VG = 4.5V
0.25
Drain Characteristics
160
1.00
Drain Characteristics
6
5.0V
4.5V
3.0
VGS
4.0V
2.5
3.5V
2.0
2.5V
1.5
2.0V
1.0
1.5V
0.5
1.0V
0.0
0
2
4
6
8 10 12 14
DRAIN-TO-SOURCE VOLTAGE (V)
300µs Pulse Test
DRAIN CURRENT (A)
RDS(ON) (Ω)
1.25
10V
5 9V
8V
4
VGS
6V
5V
3
4V
2
3V
1
2V
1V
0
0
2
4
6
8 10 12 14
DRAIN-TO-SOURCE VOLTAGE (V)
80µs Pulse Test
6
1997
6-43
MIC94030/94031
Micrel
Typical Applications
SS*
S
D
G
On
Off
Load
+5V
MIC94030
74HC04
* Substrate must be
connected to source
Figure 1. Power Switch Application
+12V
Internal
Resistor
Open Drain
Output
S
G
SS*
D
Load
MIC94031
* Substrate must be
connected to source
Figure 2. Power Control Application
SS*
S
MIC94030
A
On
Off
D
G
Load
+12V
74C04†
A
Off
On
Off
On
B Output
Off
0V
Off +12V
On
+8V
On don’t!
2MΩ SS*
S
+8V
+12V
B
MIC94030
D
* Substrate must be
connected to source
G
†
On
Off
Use “C” version only. “HC”
versions not rated to 12V.
74C04†
Figure 3. Analog Switch Application
6-44
1997