MIC94030/94031 Micrel MIC94030/94031 TinyFET™ P-Channel MOSFET Preliminary Information General Description Features The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94030/1 exhibits an on-resistance of typically 0.75Ω at 4.5V gate-to-source voltage. The MIC94030/1 also operates with only 2.7V gate-to-source voltage. The MIC94030 is the basic 4-lead P-channel MOSFET. The MIC94031 is a variation that includes an internal gate pull-up resistor that can reduce the system parts count in many applications. The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the θJA (improved heat dissipation) and makes analog switch applications practical. The small size, low threshold, and low RDS(on) make the MIC94030/1 the ideal choice for PCMCIA card sleep mode or distributed power management applications. • 13.5V minimum drain-to-source breakdown • 0.75Ω typical on-resistance at 4.5V gate-to-source voltage • 0.45Ω typical on-resistance at 10V gate-to-source voltage • Operates with 2.7V gate-to-source voltage • Separate substrate connection for added control • Industry’s smallest surface mount package Applications • • • • • Distributed power management PCMCIA card power management Battery-powered computers, peripherals Hand-held bar-code scanners Portable communications equipment Ordering Information Part Number Temperature Range* Package MIC94030BM4 –55°C to +150°C SOT-143 MIC94031BM4 –55°C to +150°C SOT-143 * Operating Junction Temperature Pin Configuration 6 Typical PCB Layout PCB heat sink plane improves heat dissipation D Drain Substrate SS Part Number Part Identification P3x Gate Identification MIC94030BM4 P30 MIC94031BM4 P31 Source SOT-143 Package (M4) Schematic Symbol G S PCB traces Functional Diagrams S S ~500kΩ Source Gate G Substrate SS Drain D Schematic Symbol MIC94030 Patents 5,355,008; 5,589,702 1997 6-41 G Internal gate-to-source pull-up resistor SS D MIC94031 MIC94030/94031 Micrel Absolute Maximum Ratings Voltage and current values are negative. Signs not shown for clarity. Drain-to-Source Voltage (pulse) .................................... 16V Gate-to-Source Voltage (pulse) .................................... 16V Continuous Drain Current TA = 25°C .................................................................... 1A TA = 100°C ............................................................... 0.5A Operating Junction Temperature ............... –55°C to +150° Storage Temperature ............................... –55°C to +150°C Total Power Dissipation TA = 25°C ............................................................ 568mW TA = 100°C .......................................................... 227mW Thermal Resistance θJA ...................................................................................... 220°C/W θJC ..................................................................................... 130°C/W Lead Temperature 1/16" from case, 10s ........................................... +300°C Electrical Characteristics Voltage and current values are negative. Signs not shown for clarity. Symbol Parameter Condition (Note 1) Min VBDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 13.5 VGS Gate Threshold Voltage VDS = VGS, ID = 250µA 0.6 IGSS Gate-Body Leakage VDS = 0V, VGS = 12V, Note 2, Note 3 RGS Gate-Source Resistor VDS = 0V, VGS = 12V, Note 2, Note 4 CISS Input Capacitance VGS = 0V, VDS = 12V IDSS Zero Gate Voltage Drain Current VDS = 12V, VGS = 0V VDS = 12V, VGS = 0V, TJ = 125°C 500 Typ 1.0 750 0.010 VDS = 10V, VGS = 10V, Note 5 6.3 RDS(ON) Drain-Source On-State Resist. VGS = 10V, ID = 100mA VGS = 4.5V, ID = 100mA VGS = 2.7V, ID = 100mA 0.45 0.75 1.20 VDS = 10V, ID = 200mA, Note 5 480 Note 1 Note 2 Note 3 Note 4 Note 5 1.4 V 1 µA 1000 kΩ 100 On-State Drain Current Forward Transconductance Units V ID(ON) gFS Max pF 25 µA 250 µA A 1.00 Ω Ω Ω mS TA = 25°C unless noted. Substrate connected to source for all conditions ESD gate protection diode conducts during positive gate-to-source voltage excursions. MIC94030 only MIC94031 only Pulse Test: Pulse Width ≤ 80µsec, Duty Cycle ≤ 0.5% 6-42 1997 MIC94030/94031 Micrel Typical Characteristics On Resistance vs. Drain Current at 25°C On Resistance vs. Drain Current at 125°C 1.50 1.50 80µs Pulse Test 80µs Pulse Test 1.25 1.00 RDS(ON) (Ω) VG = 4.5V 0.75 0.50 VG = 10V 0.25 0.00 0.0 0.5 1.0 ID (A) 1.5 VGS 120 1.8V 100 80 1.6V 60 40 20 1.4V 1.2V 0 0.0 0.5 1.0 1.5 2.0 DRAIN-TO-SOURCE VOLTAGE (V) 0.50 VG = 10V 0.5 1.0 ID (A) 1.5 2.0 Drain Characteristics DRAIN CURRENT (A) DRAIN CURRENT (mA) 2.0V 0.75 0.00 0.0 2.0 3.5 140 VG = 4.5V 0.25 Drain Characteristics 160 1.00 Drain Characteristics 6 5.0V 4.5V 3.0 VGS 4.0V 2.5 3.5V 2.0 2.5V 1.5 2.0V 1.0 1.5V 0.5 1.0V 0.0 0 2 4 6 8 10 12 14 DRAIN-TO-SOURCE VOLTAGE (V) 300µs Pulse Test DRAIN CURRENT (A) RDS(ON) (Ω) 1.25 10V 5 9V 8V 4 VGS 6V 5V 3 4V 2 3V 1 2V 1V 0 0 2 4 6 8 10 12 14 DRAIN-TO-SOURCE VOLTAGE (V) 80µs Pulse Test 6 1997 6-43 MIC94030/94031 Micrel Typical Applications SS* S D G On Off Load +5V MIC94030 74HC04 * Substrate must be connected to source Figure 1. Power Switch Application +12V Internal Resistor Open Drain Output S G SS* D Load MIC94031 * Substrate must be connected to source Figure 2. Power Control Application SS* S MIC94030 A On Off D G Load +12V 74C04† A Off On Off On B Output Off 0V Off +12V On +8V On don’t! 2MΩ SS* S +8V +12V B MIC94030 D * Substrate must be connected to source G † On Off Use “C” version only. “HC” versions not rated to 12V. 74C04† Figure 3. Analog Switch Application 6-44 1997